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On the Influence of Applied Fields on Spinel Formation

Published online by Cambridge University Press:  10 February 2011

C. Korte ,
J. K. Farrer ,
N. Ravishankar ,
J. R. Michael ,
H. Schmalzried  and
C. B. Carter
C. Korte
Affiliation:
Department of Chemical Engineering and Material Science, University of Minnesota 421 Washington Ave. SE., Minneapolis, MN 55455
J. K. Farrer
Affiliation:
Department of Chemical Engineering and Material Science, University of Minnesota 421 Washington Ave. SE., Minneapolis, MN 55455
N. Ravishankar
Affiliation:
Department of Chemical Engineering and Material Science, University of Minnesota 421 Washington Ave. SE., Minneapolis, MN 55455
J. R. Michael
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87 185–1405
H. Schmalzried
Affiliation:
Institut für Physikalische Chemie und Elektrochemie der Universität Hannover Callinstr. 3–3A. 30167 Hannover, Germany
C. B. Carter
Affiliation:
Department of Chemical Engineering and Material Science, University of Minnesota 421 Washington Ave. SE., Minneapolis, MN 55455
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Abstract

Interfaces play an important role in determining the effect of electric fields on the mechanism of the formation of spinel by solid-state reaction. The reaction occurs by the movement of phase boundaries but the rate of this movement can be affected by grain boundaries in the reactants or in the reaction product. Only by understanding these relationships will it be possible to engineer their behavior. As a particular example of such a study, Mgln2O4 can be formed by the reaction between single-crystal MgO substrate and a thin film of In2O3with or without an applied electric field. High-resolution backscattered electron (BSE) imaging and electron backscattered diffraction (EBSD) in a scanning electron microscope (SEM) has been used to obtain complementary chemical and crystallographic information.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 586: Symposium M – Interfacial Engineering for Optimized Properties II , 1999 , 151
Copyright
Copyright © Materials Research Society 2000

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References

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