Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-09T03:30:27.329Z Has data issue: false hasContentIssue false
  • English
  • Français

A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth

Published online by Cambridge University Press:  22 February 2011

Bing-Lin Gu ,
Jing-Zhi Yu ,
Xiao Hu ,
Kaoru Ohno  and
Yoshiyuki Kawazoe
Bing-Lin Gu
Affiliation:
On leave from Department of Physics, Tsinghua University, Beijing, 100084, China
Jing-Zhi Yu
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Xiao Hu
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Kaoru Ohno
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Yoshiyuki Kawazoe
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
Get access

Abstract

A concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III – V alloys. The ground state ordered structures of ternary III – V semiconductor alloys are deduced and a dynamic model is established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 111
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bellon, P., et. al., Appl. Phys. Lett. 52(97), 567(1988)Google Scholar
[2] Stringfellow, G. B. and Chen, G. S., J. Vac. Sci. Technol. B9, 2182(1991)Google Scholar
[3] Ihm, Y. E., et. al., Appl. Phys. Lett. 51, 2013(1987)Google Scholar
[4] Jen, H. R., Ma, K. Y., and Stringfellow, G. B., Appl. Phys. Lett. 54(12), 1154(1989)Google Scholar
[5] Jen, H. R., Cherng, M. J., and Stringfellow, G. B., Appl. Phys. Lett. 48, 1603(1986)Google Scholar
[6] Kuan, T. S., et. al., Phys. Rev. Lett. 54, 201(1985)Google Scholar
[7] Kuan, T. S., Wang, W. I., and Wilkie, E. L., Appl. Phys. Lett. 51, 51(1987)Google Scholar
[8] Osorio, Roberto, et. al., Phys. Rev. B45, 11, 173(1992)Google Scholar
[9] Bernard, Jame E., Froyen, S., and Alex Zunger, Phys. Rev. B44, 11, 178(1991)Google Scholar
[10] Froyen, S., and Zunger, A., Phys. Rev. Lett. 66, 2132(1991)Google Scholar
[11] Ni, Jun, Lai, Xichun, and Gu, Binglin, J. Appl. Phys. April(1993)Google Scholar
[12] Gu, Binglin, Ni, Jun, and Zhang, Xiaowen, J. Appl. Phys. 70(8), 4224(1991)Google Scholar
[13] Khachaturyan, A. G. and Shatalov, G. A., Acta Metallurgica V23, 1089(1975)Google Scholar
[14] Fontaine, D. de, Acta Metallurgica V23, 553(1975)Google Scholar
[15] Sanchez, J. M., Gratias, D., and Fontaine, D. de, Acta. Cryst. A38, 214(1982)Google Scholar