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Effect of Surface Chemistry on the diffusion of Copper innanoporous dielectrics

Published online by Cambridge University Press:  17 March 2011

Oscar Rodriguez ,
Woojin Cho ,
Ravi Saxena ,
Ravi Achanta ,
William N. Gill  and
Oel L Plawsky
Oscar Rodriguez
Affiliation:
Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute, Troy NY 12180, USA
Woojin Cho
Affiliation:
Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute, Troy NY 12180, USA
Ravi Saxena
Affiliation:
Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute, Troy NY 12180, USA
Ravi Achanta
Affiliation:
Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute, Troy NY 12180, USA
William N. Gill
Affiliation:
Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute, Troy NY 12180, USA
Oel L Plawsky
Affiliation:
Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute, Troy NY 12180, USA
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Abstract

This work is aimed at understanding the nature of the interactions betweenmetal interconnects and nanoporous dielectrics in integrated circuits.Electrical testing of MIS capacitors is used to assess Cu diffusion andcharge injection in the dielectric in the presence of an electric field. Wehave found that surface modification of nanoporous silica reveals theimportance of chemically bound or adsorbed water species in the dielectricand how they trigger metal diffusion. We propose that a combination ofmoisture-related species in the dielectric and interfacial oxygen oxidizeCu. The copper oxide acts as a source for Cu ions available for diffusion. Aquantitative analysis of Cu drift in nanoporous dielectrics that shows theimportance of surface chemistry is presented and the mechanism of metaldiffusion and charge injection in nanoporous dielectrics is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.8
Copyright
Copyright © Materials Research Society 2004

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