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Effects of Nitridation by N2O or No on the Electrical Properties of Thin Gate or Tunnel Oxides

Published online by Cambridge University Press:  14 March 2011

C. Gerardi ,
T. Rossetti ,
M. Melanotte ,
S. Lombardo  and
I. Crupi
C. Gerardi
Affiliation:
STMicroelectronics, Central Research & Development, Catania Technology Center, Stradale Primosole 50, 95121 Catania, Italy
T. Rossetti
Affiliation:
STMicroelectronics, Central Research & Development, Catania Technology Center, Stradale Primosole 50, 95121 Catania, Italy
M. Melanotte
Affiliation:
STMicroelectronics, Central Research & Development, Catania Technology Center, Stradale Primosole 50, 95121 Catania, Italy
S. Lombardo
Affiliation:
Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Consiglio Nazionale delle Ricerche, Stradale Primosole 50, 95121 Catania, Italy
I. Crupi
Affiliation:
Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Consiglio Nazionale delle Ricerche, Stradale Primosole 50, 95121 Catania, Italy
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Abstract

We have studied the effects of nitridation on the leakage current of thin (7-8 nm) gate or tunnel oxides. A polarity dependence of the tunneling current has been found this behavior is related to the presence of a thin silicon oxynitride layer at the SiO2/Si-substrate interface. The oxynitride layer lowers the tunneling current when electrons are injected from the interface where the oxynitride is located (substrate injection). The current flowing across the oxide when electrons are injected from the opposite interface (gate injection) is not influenced by the oxynitride. The increase of nitrogen concentration leads to a decrease of the tunneling current for substrate electron injection.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C7.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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