Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-19T15:46:49.066Z Has data issue: false hasContentIssue false

Electrical and Optical Properties of Low Dielectric Constant Planarization Polymer for High-Aperture-Ratio a-Si:H TFT-LCDs

Published online by Cambridge University Press:  10 February 2011

Je-Hsiung Lan
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109–2108
Tsung-Kuan Chou
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109–2108
Chun-Sung Chiang
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109–2108
Jerzy Kanicki
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109–2108
Get access

Abstract

We have evaluated the electrical and the optical properties of a planarization polymer (benzocyclobutene; BCB) having a dielectric constant of 2.65 for the application to high aperture-ratio a-Si:H TFT-LCDs. An average optical transmittance of 96 % was found for the BCB film having a thickness of 3 μm in the visible-light region (400–700 nm) of the absorption spectrum. Experimental results showed that the back-channel etched a-Si:H TFT electrical performance was not significantly affected by the BCB passivation. In addition, the three-dimensional analysis of the coupling capacitances between ITO pixel electrode and metal bus lines have indicated that the low dielectric constant of planarization polymer is necessary for the application of this material to the high-aperture-ratio a-Si:H TFT-LCDs. Finally, we have established that for a given tolerance margin, a certain value of polymer thickness is needed to suppress the feed-through voltage and the vertical cross-talk between pixel electrode and metal bus lines.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ueda, T., Sugahara, J., Akiyama, M., Ikeda, M., Suzuki, K., SID 93 Digest. 739 (1993).Google Scholar
2 Kawachi, G., Kimura, E., Wakui, Y., Konishi, N., Yamamoto, H., Matsukawa, Y., and Sasano, A., IEEE Trans. on Electron Dev. 41. 1120 (1994).Google Scholar
3 Takahashi, N., Hirai, Y., Kaneko, S., Takashima, N., and Sukegawa, O., SID 93 Digest, 610 (1993).Google Scholar
4 Kim, S. S., Moon, S. H., Kim, D. G., Kim, N. D., SID 95 Digest, 15 (1995).Google Scholar
5 Sakamoto, M., Ukita, T., Maeda, A., and Ohi, S., SID 96 Digest, 681 (1996).Google Scholar
6 den Boer, W., Zhong, J. Z., Gu, T., Byun, Y. H., and Friends, M., Euro Display'96, 53 (1996).Google Scholar
7 Kim, J. H., Park, S. I., Kim, W. K., Lee, H. Y., Ryu, K. H., Park, J. Y., and Soh, H. S., AMLCD '96/IDW'96, 149(1996).Google Scholar
8 Perettie, D. J., Radier, M.J., and Takahashi, T., Asia Display '95, 721 (1995).Google Scholar
9 Li, T., Chen, C.-Y., Malone, C. T., and Kanicki, J., Mat. Res. Soc. Symp. Proc., 424 15 (1996).Google Scholar
10 Chen, C.-Y. and Kanicki, J., Electronic Device Lett., 17. 437 (1996).Google Scholar
11 Kishida, S., Naruke, Y., Uchida, Y., and Matsumura, M., Jpn. J. Appl. Phys., 22. 511 (1983).Google Scholar
12 Manual, Raphael: Interconnect Analysis Program. TMA. 1996.Google Scholar
13 Libsch, F. R. and Lien, A., Proc. of AMLCD '95, 72 (1995).Google Scholar