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Electrical and Photonic Functions in Transparent Oxide Semiconductors: Utilization of Built-in Nanostructure

Published online by Cambridge University Press:  01 February 2011

Hideo Hosono
Hideo Hosono*
Affiliation:
Matenals and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midon-ku, Yokohama 226–8503, JAPAN Transparent Electro-Active Matenals Project, Exploratory Research for Advanced Technology, (ERATO), Japan Science and Technology Agency, KSP-C1232, Sakato3–2-l, Takatsu-ku, Kawasaki 213–0012, JAPAN
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Abstract

We review distinct photonic/electronic properties onginating from built-in nano-structures in transparent oxide based matenals, emphasizing potential of nanostructures hidden in crystal structure. Matenals focused are oxychalcogenides LaCuOCh (Ch=chalcogen ion) and homologous oxides InGaO3(ZnO)m(m=integer) having naturally formed multi-quantum well structures. Novel functions and devices ansing from the built-in nanostructure are: (1) modulation doping of positive holes and room temperature stable exciton in LaCuOCh, (2) high performance transparent field-effect transistor fabncated in InGaO3(ZnO)5 epitaxial thin films, and (3) conversion of insulator to persistent electronic conductor by carner doping in 12CaO 7A12O3 (C12A7).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V1.1
Copyright
Copyright © Materials Research Society 2004

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References

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