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Electrical Characteristics of LSMCD-Derived SrBi2.4Ta2O9 Thin Films Using TiO2 Buffer Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices

Published online by Cambridge University Press:  10 February 2011

Joo Dong Park  and
Tae Sung Oh
Joo Dong Park
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Tae Sung Oh
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
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Abstract

Pt/SBT/TiO2/Si structure was proposed for metal/ferroelectric/insulator/semiconductor field effect transistor (MFIS-FET) applications. SrBi2.4 Ta2O9 (SBT) thin films of 400 nm thickness were prepared using liquid source misted chemical deposition (LSMCD) on Si(100) substrates with TiO2 buffer layers deposited by DC reactive sputtering with the thickness ranging from 5 nm to 200 nm and electrical properties of MFIS structures were investigated. Memory window and maximum capacitance of the Pt/SBT/TiO2 /Si structure increased with decreasing the thickness of TiO2 buffer layer. The Pt/SBT(400 nm)/TiO2(10 nm)/Si structure exhibited C-V hysteresis loop with the memory window of 1.6 V at ±5 V, and could be applicable for MFISFET applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 31
Copyright
Copyright © Materials Research Society 2000

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References

1 Scott, J. F. and Paz de Araujo, C. A., Science, 246, 1400 (1989).Google Scholar
2 Scott, J. F., Ferroelectrics Review, 1, 85 (1998).Google Scholar
3 Moll, J. L. and Tarui, Y., IEEE Trans. Electron Devices, ED-10, 338 (1963).Google Scholar
4 Shichi, Y., Tanimoto, S., Goto, T., Kuroiwa, K., Tarui, Y., Jpn. J. Appl. Phys., 33, 5172 (1994).Google Scholar
5 Kim, Y. T. and Shin, D. S., Appl. Phys. Lett, 71, 3507 (1997).Google Scholar
6 Lee, H. N., Kim, Y. T., and Choh, S. H., J. Kor. Phys. Soc., 34, 454 (1999).Google Scholar
7 Tokumitsu, E., Itani, K., Moon, B., and Ishiwara, H., Jpn. J. Appl. Phys., 34, 5202 (1995).Google Scholar
8 Alexsandrov, P., Koprinarova, J., and Todorov, D., Vacuum, 47, 1333 (1996).Google Scholar
9 Schroder, D. K., Semiconductor Materials and Device Characterization, 2nd ed. (John Wiely & Sons, 1998), Chap. 6.Google Scholar
10 McMillan, L. D., Huffman, M., Roberts, T. L., Scott, M. C., and Araujo, C. A. Paz de, Integrated Ferroelectrics, 4, 319 (1994).Google Scholar
11 Miller, S. L. and McWhorter, P. J., J. Appl. Phys., 72, 5999 (1992).Google Scholar