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Electrical Modelling and Characterisation of Alloyed Ohmic Contacts

Published online by Cambridge University Press:  21 February 2011

Geoffrey K. Reeves ,
Patrick W. Leech  and
H. Barry Harrison
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia.
Patrick W. Leech
Affiliation:
Telecom Australia Research Labs, Melbourne, Australia.
H. Barry Harrison
Affiliation:
Griffith University, Brisbane, Australia.
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Abstract

This paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance of a planar ohmic contact. It is proposed that in the case of a typical Au-Ge-Ni alloyed ohmic contact, a more realistic model would need to take into account the presence of the alloyed layer at the metal-semiconductor interface. An alternative is described which is based on three contact layers and the two interfaces between them, thus forming a Tri-Layer Transmission Line Model (TLTLM). Expressions are given for the contact resistance Rc and the contact end resistance Re of this structure, together with a current division factor, f. Values for the parameters of this model are inferred from experimentally reported values of Rc and Re for two types of contact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 153
Copyright
Copyright © Materials Research Society 1994

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References

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