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Emission of Rare Earth Ions Incorporated into Metal Oxide Thin Films and Fibres

Published online by Cambridge University Press:  01 February 2011

Ilmo Sildos ,
Sven Lange ,
Tanel Tätte ,
Valter Kiisk ,
M. Kirm  and
J. Aarik
Ilmo Sildos
Affiliation:
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
Sven Lange
Affiliation:
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
Tanel Tätte
Affiliation:
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
Valter Kiisk
Affiliation:
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
M. Kirm
Affiliation:
Institut für Experimentalphysik der Universität Hamburg, Luruper Chaussee 149, Hamburg 22 761, Germany
J. Aarik
Affiliation:
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
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Abstract

Photoluminescence (PL) of undoped and Sm-doped TiO2, ZrO2 and HfO2 thin films and fibers was investigated at temperatures ranging from 6 to 300 K. The thin films were grown by the atomic layer deposition (ALD) technique and doped by using the ion implantation method. The fibers were prepared by using the sol-gel method whereas an in-situ doping was used to obtain the required concentration of Sm3+ ions in the films. In undoped as well as doped materials, PL was efficiently excited via band-to-band transitions. The emission of undoped materials was attributed to the radiative recombination of self-trapped excitons (STE). In doped materials, intense emission of Sm3+ was recorded. It is proposed, that there exists a concurrence between the radiative recombination of bound excitonic states and the energy transfer to Sm3+ ions, particularly at lower temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V3.6
Copyright
Copyright © Materials Research Society 2004

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References

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