Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-22T02:15:31.496Z Has data issue: false hasContentIssue false
  • English
  • Français

Emission Wavelength Control of Si-rich SiOx MOSLED by Detuning Vapor Fluence and Plasma Power During PECVD Growth

Published online by Cambridge University Press:  01 February 2011

Bo-Han Lai ,
Yi-Hao Pai ,
Chi-Wee Liu  and
Gong-Ru Lin
Bo-Han Lai
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Yi-Hao Pai
Affiliation:
paiyihao930@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4,, Taipei, 10617, Taiwan
Chi-Wee Liu
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Electronics Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Gong-Ru Lin
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Get access

Abstract

Photoluminescence (PL) intensity and wavelength control of Si-rich SiOx film and Si-rich SiOx based MOSLED achieved by detuning plasma power (RF power) during plasma-enhanced chemical vapor deposition (PECVD) growth is investigated. The peak of PL spectrum blue-shifts from 780 to 400 nm by modifying the RF power form 20 to 70 W during PECVD growth. The average sizes of Si nanocluster under RF power of 60 and 70W are 2.61 and 1.83 nm, respectively. The EL color of Si nanocrystal (nc-Si) based MOSLEDs can be tunable among orange-red, green and blue colors by growing the SiOx films with PECVD under different RF power. Under RF power from 50 to 70W, the turn-on voltage of nc-Si based MOSLEDs increases from 26 to 60 V, the optical power also increases from 1.6 W/cm2 to 9.7 W/cm2 and the power-current slope are 0.51, 3.24 and 62.92 mW/A, respectively.

Keywords

Siplasma-enhanced CVD (PECVD) (deposition)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I10-20
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Canham, L. T. “Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett., vol 57, pp. 1046–1048 (1990).Google Scholar
2. Cullis, G. Canham, L. T. and Calcott, P. D. J. “The structural and luminescence properties of porous Si,” J. Appl. Phys. vol. 82, pp. 909–965 (1997).Google Scholar
3. Lin, H. Lee, S. C. Chen, Y. F. “Strong room-temperature photoluminescence of hydrogenated amorphous Si oxide and its correlation to porous Si,” Appl. Phys. Lett., vol. 63, pp. 902–904 (1993).Google Scholar
4. Zhao, X. Schoenfeld, O. Kusano, J. Aoyagi, Y. and Sugnao, T. “Observation of direct transitions in Si nanocrystallites,” Jpn. J. Appl. Phys., vol. 33, pp. 899–901 (1994).Google Scholar
5. Takagi, H. Ogawa, H. Yamazaki, Y. Ishizaki, A. and Nakagiri, T. “Quantum size effects on photoluminescence in ultrafine Si particles,” Appl. Phys. Lett., vol. 56, pp. 2379–2380 (1990).Google Scholar
6. Mutti, P. Ghislotti, G. Bertoni, S. Bonoldi, L. Cerofolini, G. F. Meda, L. Grilli, E. and Guzzi, M., “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett., vol. 66, pp. 851–853 (1995).Google Scholar
7. Shimizu-Iwayama, T., Fujita, K. Nakao, S. Saitoh, K. Fujita, T. and Itoh, N. “Visible photoluminescence in Si+-implanted silica glass,” J. Appl. Phys., vol. 75, pp. 7779–7783 (1994).Google Scholar
8. Ding, L, Chen, T. P. Liu, Y. Yang, M. Wong, J. I. Liu, K. Y. Zhu, F. R. and Fung, S. “The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin film,” Nanotechnology 18, pp.455306 (2007).Google Scholar
9. Delerue, C. Allan, G. and Lannoo, M. “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B 48, pp. 11024–11036 (1993).Google Scholar
10. Fowler, R. H. and Nordheim, L. W. Proc. R. Soc., London Ser. A 119, 173 (1928).Google Scholar