Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:49:11.711Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Encapsulated Indium Films for Melting Experiments

Published online by Cambridge University Press:  25 February 2011

John H. Scofield ,
R. W. Epworth  and
D. M. Tennant
John H. Scofield
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
R. W. Epworth
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
D. M. Tennant
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
Get access

Abstract

We describe the fabrication of submicron, multiprobe thin indium film conductors for electrical measurments above their melting transition. Problems unique to handling liquid films were overcome by using tri-level Si3N4/In/W structures. Tungsten (W) leads made good electrical contact to, yet did not alloy With the liquid indium (In). A silicon-nitride (Si3N4 ) encapsulating layer deposited over the In/W devices prevented the indium from forming islands when liquid. Indium wires were fabricated using e-beam lithography and liftoff. Low temperature reactive sputtering technique was used to deposit the Si3N4 without melting the indium. The technique could be easily adapted to use with other low melting point materials.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 85
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See for instance Dutta, P. and Horn, P., Rev. Mod. Phys 53, 497 (1981).Google Scholar
2. See Scofield, J. H., Mantese, J. V., and Webb, W. W., Phys. Rev. B 32, 736 (1985).Google Scholar
3. Josef Kedzia and Vandamme, L. K. J., Phys. Lett. 66A, 313 (1978).Google Scholar
4. 2.0 in diameter, 0.020 in. thick, 100 boron doped, 5–10 11cm, silicon wafers were supplied by the Pensilco Co. with a 300–500 nm thermally grown oxide.Google Scholar
5. see Chiao, R. Y. et al., Rev. Phys. Appl. 9, 183 (1974).Google Scholar
6. see Mogab, C. J., Petroff, P. M., and Sheng, T. T., J. Electrochem. Soc. 122, 815 (1975).Google Scholar