Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-18T01:21:55.953Z Has data issue: false hasContentIssue false
  • English
  • Français

A Facile Method for Patterning Substrates with Zinc Oxide Nanowires

Published online by Cambridge University Press:  31 January 2011

Jeong-Hyun Cho ,
Elizabeth W Cha  and
David Gracias
Jeong-Hyun Cho
Affiliation:
jhcho0704@hotmail.com, Johns Hopkins University, Departments of Chemical and Biomolecular Engineering, Baltimore, United States
Elizabeth W Cha
Affiliation:
elizabeth.w.cha@gmail.com, Johns Hopkins University, Department of Biomedical Engineering, Baltimore, Maryland, United States
David Gracias
Affiliation:
dgracias@jhu.edu, Johns Hopkins University, Departments of Chemical and Biomolecular Engineering, Chemistry, Baltimore, United States
Get access

Abstract

Conventional growth of zinc oxide (ZnO) nanowires (NWs) is typically carried out using vapor liquid solid (VLS) and chemical vapor deposition (CVD) methods. While these methods are effective, they often involve the use of specialty gasses and equipment. We have discovered that ZnO NWs grow spontaneously from zinc (Zn) films (thermally evaporated on silicon (Si) substrates) when the films are merely heated on a hot-plate in air at ambient pressures for 10 minutes. This process does not involve any metal catalysts, seed layers, specialty gasses or surface treatments in forming patterned regions (on silicon substrates) of NWs with typical diameters in the range of 20-50 nm and lengths of 2-3 μm.

Keywords

nanoscaleZncrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1174: Symposium V – Functional Metal-Oxide Nanostructures , 2009 , 1174-V07-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hümmer, K., Phys. Status Solidi B 56, 249 (1973).Google Scholar
2 Jeong, J. S. Lee, J. Y. Cho, J. H. Lee, C. J. An, S. J. Yi, G. C. and Gronsky, R. Nanotechnology 16, 2455 (2005).Google Scholar
3 Ho, S. T. Wang, C. Y. Liu, H. L. and Lin, H. N. Chemical Physics Letters 463, 141 (2008).Google Scholar
4 Ren, S. Bai, Y.F. Chen, J. Deng, S.Z. Xu, N.S. Wu, Q.B. and Yang, Shihe, Materials Letters 61, 666 (2007).Google Scholar
5 Xing, Y.J. Xi, Z.H. Zhang, X.D. Song, J.H. Wang, R.M. Xu, J. Xue, Z.Q. and Yu, D.P. Applied Physics A 80, 1527 (2005).Google Scholar