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Formation Mechanism Of Negative Fixed Charge In Glass At Lead Glass/Silicon Interface

Published online by Cambridge University Press:  10 February 2011

Susumu Murakami ,
Hitoshi Matsuzaki ,
Mitsuyuki Matsuzaki ,
Masao Tsuruoka  and
Minoru Kanno
Susumu Murakami
Affiliation:
Hitachi Research Lab., Hitachi Ltd., Hitachi, Ibaraki, 319–12 Japan
Hitoshi Matsuzaki
Affiliation:
Hitachi Works, Hitachi Ltd., Hitachi, Ibaraki, 317 Japan
Mitsuyuki Matsuzaki
Affiliation:
Hitachi Works, Hitachi Ltd., Hitachi, Ibaraki, 317 Japan
Masao Tsuruoka
Affiliation:
Hitachi Works, Hitachi Ltd., Hitachi, Ibaraki, 317 Japan
Minoru Kanno
Affiliation:
Hitachi Haramachi Electronics, Co, Ltd., Haramachi, Fukusima, 975 Japan
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Abstract

The physical origins of negative fixed charges at the lead glass/silicon interface have been studied. It was found that a thin p-type region is present on the n-type substrate in the PbO-SiO2-Al2O3 glass/silicon system from the punch-through voltage, pinch-off voltage, and SIMS analysis. A new model of the negative fixed charge was proposed from the MIS structure with the surface pn junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 135
Copyright
Copyright © Materials Research Society 1998

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References

(1) Nishimatsu, S. and Tokuyama, T., in Proceedings of the 1st Conference on Solid State Devices, Tokyo, p. 125 (1969)Google Scholar
(2) Goodman, A. M., IEEE Trans. Electron Devices, ED–21, 753 (1974)Google Scholar
(3) Flowers, D. L. and Hughes, H. G., J.Electrochem. Soc., 129, 154 (1982)Google Scholar
(4) Shimbo, M., Tai, S., and Tanzawa, K., J. Am. Ceram. Soc., 69, 23 (1986)Google Scholar
(5) Murakami, S., Miyata, K., Tsuruoka, M., and Kobayashi, Y., J.Electrochem. Soc., 129, 154 (1982)Google Scholar
(6) Murakami, S., J.Electrochem. Soc., 141, 3193 (1994)10.1149/1.2059301Google Scholar
(7) Murakami, S., Misawa, Y., and Momma, N., J.Electrochem. Soc., 134, 958 (1987)Google Scholar
(8) Sze, S. M., Physics of Semiconductor Devices, 2nd ed., p.465, John Wiley and Sons, Inc., New York (1981).Google Scholar
(9) Grove, A. S., Physics and Technology of Semiconductor Devices, p.333, John Wiley and Sons, Inc., New York (1967).Google Scholar