Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-09T03:41:19.916Z Has data issue: false hasContentIssue false
  • English
  • Français

The Formation of Silicon Clusters in Plasma-Enhanced Chemically Vapour Deposited Si:O:H:F Alloys

Published online by Cambridge University Press:  21 February 2011

A. G. Dias  and
J. Figueiredo
A. G. Dias
Affiliation:
Centro de Fisica Molecular das Universidades de Lisboa, Instituto Nacional de Investigaçāo Científica, Complexo I (I.S.T.), Av. Rovisco Pais, 1000 Lisboa, Portugal
J. Figueiredo
Affiliation:
Centro de Fisica Molecular das Universidades de Lisboa, Instituto Nacional de Investigaçāo Científica, Complexo I (I.S.T.), Av. Rovisco Pais, 1000 Lisboa, Portugal
Get access

Abstract

The structural and optoelectronic properties of a new plasma-enhanced chemically vapour deposited Si:O:H:F alloy are reported taking into account respectively the results from X-ray diffraction, Raman and infrared absorption spectroscopy analysis and from dark and photo conductivity and optical absorption measurements. Films produced with a F2/SiH4 gas ratio (r) lower or equal than 0.4 are amorphous semiconducting Si:O:H:F alloys, whereas films deposited with r≤0.5 exhibit a multiphase structure consisting of silicon clusters embedded in an amorphous insulating fluorine doped silicon oxide tissue. The formation of silicon clusters is the result of a segregation process of the fluorine and oxygen atoms in the amorphous Si:O:H:F matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 57
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rabinovich, E. M., Phys. and Chem. of Glasses 2, 54 (1983).Google Scholar
2. Dumas, P., Corset, J., Carvalho, W., Levy, Y. and Neuman, Y., J. Non-Cryst. Sol. 47, 239 (1982).Google Scholar
3. Mulder, C. A. M., Janssen, R. K., Bachmann, P. and Leers, D., J. Non-Cryst. Sol. 72 243 (1985).Google Scholar
4. Chang, R. P. H., Chang, C. C. and Darack, S., Appl. Phys. Lett. 3, 999 (1980).Google Scholar
5. , Morita, Aritome, S., Tsukude, M., Murakawa, T. and Hirose, M., Appl. Phys. Lett. 47, 253 (1985).Google Scholar
6. Morita, M., Aritome, S., Tanaka, T. and Hirose, M., Appl. Phys. Lett. 49, 699 (1986).Google Scholar
7. Martins, R., Dias, A. G. and Guimarães, L., J. Non-Cryst. Sol. 57, 9 (1983).Google Scholar
8. Dias, A. G., Ochando, M. A. and Guimarães, L., Proc. II Simpósio Ibérico de Física da Matéria Condensada, Sevilla, 1986, pp. 308–312.Google Scholar
9. Dias, A. G. and Bustarret, E., Proc. II Simpósio lbérico de Física da Matéria Condensada, Sevilla, 1986, pp. 317–320.Google Scholar
10. Dias, A. G., Bustarret, E. and Silva, R. C. da, in The Physics and Technology of Amorphous Silica edited by Devine, R. (Plenum Press, New York, 1988), pp. 353–358.Google Scholar
11. Dias, A. G., presented at the Colloque International sur la Science des Materiaux pour I' Energie, Trieste, 1986 (unpublished).Google Scholar
12. Cardona, M., Phys. Stat. Sol. (b) 118. 463 (1983).Google Scholar
13. Chao, S. S., Lucovsky, G., Tsu, D. V., Lin, S. Y., Richard, P. D., Takagi, Y., Pai, P., Keem, J. E. and Tyler, J. E., J. Non-Cryst. Sol. 77–78, 929 (1985).Google Scholar
14. Ley, L., Shanks, H. R., Fang, C. J., Gruntz, K. and Cardona, M., J. Phys. Soc. of Japan 49, Suppl. A, 1241 (1980).Google Scholar
15. Lucovsky, G., Sol. St. Comm. 29, 571 (1979).Google Scholar
16. Dias, A. G., Guimarges, L. and Brunel, M., in The Physics and Technology of Amorphous Silica, edited by Devine, R. (Plenum Press, New York, 1988), pp. 359–363.Google Scholar
17. lqbal, Z. and Veprek, S., J. Phys. C 15, 377 (1982).Google Scholar
18. Beeman, D., Tsu, R. and Thorpe, M. F., Phys. Rev. B 32, 874 (1985).Google Scholar
19. Bustarret, E., Deneuville, A., Roux-Buisson, H. and Brunel, L., J. Non-Cryst. Sol. 59–60 205 (1983).Google Scholar
20. Silva, R. C. da, Dias, A. G., Guimarães, L. and Silva, M. F. da, Proc. II Simpósio Ibérico de Física da Matéria Condensada, Seville, 1986, pp. 313–316.Google Scholar
21. Paesler, M. A., Anderson, D. A., Freeman, E. C., Moddel, G. and Paul, W., Phys. Rev. Lett. 21, 1492 (1978).Google Scholar
22. Dies, A. G., Proc. 9th International Symposium on Plasma Chemistry, Pugnochiuso, 1989, pp. 1365–1370.Google Scholar