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Formation of Ultra Smooth Bi-Based Ferroelectric Films and their size effect on Dielectric Constant

Published online by Cambridge University Press:  10 February 2011

H. Tabata ,
T. Yanagita ,
M. Hamada  and
T. Kawai
H. Tabata
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
T. Yanagita
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
M. Hamada
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
T. Kawai
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan. tabata@sanken.osaka-u.ac.jp
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Abstact

We have formed Bi-based ferroelectric films, such as Bi2WO6, Bi2VO5.5(n=1), Bi2SrTa2O9, Bi3TiNbO9(n=2) and Bi4Ti3O12(n=3) using a pulsed laser deposition technique. Especially, the Bi2VO5.5 film shows an atomically smooth surface with a flat 2000-3000Å wide terrace and steps of 8 Å and 16Å which correspond to a half and one unit cell, respectively. The dielectric constant, remanent polarization and coercive field of the Bi2VO5.5 thin films formed on Nb-SrTiO3(100) are 8, 3.0 μ C/cm2 and 16.0 kV/cm, respectively. The Bi2VO5.5 film formed on SiO2/Si(100) shows memory windows of 0.35V against a±2V gate bias during C-V measurements‥

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 105
Copyright
Copyright © Materials Research Society 1998

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References

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