Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-18T18:30:29.540Z Has data issue: false hasContentIssue false
  • English
  • Français

GalnAsSb Materials for Thermophotovoltaics

Published online by Cambridge University Press:  10 February 2011

C. A. Wang ,
G. W. Turner ,
M. J. Manfra ,
H. K. Choi  and
D. L. Spears
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
G. W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
M. J. Manfra
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
D. L. Spears
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
Get access

Abstract

Gai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 55
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. 2nd NREL Conference on the Thermophotovoltaic Generation of Electricity, edited by Benner, J.P., Coutts, T.J., and Ginley, D.S. (AIP Conf. Proc. 358, Woodbury, NY, 1995).Google Scholar
2. Wanlass, M.W., Ward, J.S., Emery, K.A., Al-Jassim, M.M., Jones, K.M., and Coutts, T.J., Solar Energy Mater, and Solar Cells 41/42, 405 (1996).Google Scholar
3. Tournie, E., Pitard, F., and Joullie, A., J. Cryst. Growth 104, 683 (1990).Google Scholar
4. Onabe, K., Jpn. J. Appl. Phys. 21, 964 (1982).Google Scholar
5. Stringfellow, G.B., J. Cryst. Growth 58, 194 (1982).Google Scholar
6. Cherng, M.J., Jen, H.R., Larsen, C.A., Stringfellow, G.B., Lundt, H., and Taylor, P.C., J. Cryst. Growth 77, 408(1986).Google Scholar
7. Chiu, T.H., Zyskind, J.L., and Tsang, W.T., J. Electron. Mater. 16, 57 (1987).Google Scholar
8. Choi, H.K., Eglash, S.J., and Turner, G.W., Appl. Phys. Lett. 64, 2474 (1994).Google Scholar
9. Giani, A., Bougnot, J., Pascal-Delannoy, F., Bougnot, G., Kaoukab, J., Allogho, G.G., and Bow, M., Mater. Sci. and Eng. B9, 121 (1991).Google Scholar
10. Choi, H.K. and Turner, G.W., SPIE Proc. Vol. 2382, 236 (1995).Google Scholar
11. Wang, C.A., Patnaik, S., Caunt, J.W., and Brown, R.A., J. Cryst. Gr. 93, 228 (1988).Google Scholar
12. Wang, C.A., Salim, S., Jensen, K.F., and Jones, A.C., J. Cryst. Growth to be published.Google Scholar
13. DeWinter, J.C., Pollock, M.A., Srivastava, A.K., and Zyskind, J.L., J. Electron. Mater. 14, 729 (1985).Google Scholar
14. Sopanen, M., Koljonen, T., Lipsanen, H., and Tuomi, T., J. Cryst. Growth 145, 492 (1994).Google Scholar
15. Tournie, E., Lazzari, J.-L., Pitard, F., Alibert, C., Joullie, A., and Lambert, B., J. Appl. Phys. 68, 5936(1990).Google Scholar
16. Charache, G.W., Egley, J.L., Danielson, L.R., DePoy, D.M., Baldasaro, P.F., Campbell, B.C., Hui, S., Frass, L.M., and Wojtczuk, S.J., presented at the 26th Photovoltaic Specialist Conf.Google Scholar