Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T07:22:49.255Z Has data issue: false hasContentIssue false
  • English
  • Français

Ga-vacancy Activation Under Low Energy Electron Irradiation in GaN-based Materials – ERRATUM

Published online by Cambridge University Press:  23 October 2012

Henri Nykänen ,
Sami Suihkonen ,
Lucasz Kilanski ,
Markku Sopanen  and
Filip Tuomisto

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

doi: 10.1557/opl.2012.782, Published by Cambridge University Press, 13 April 2012.

The acknowledgment that follows should have been included in the published article:

THE CORRECTION

This article was originally published on June 2012 with a mistake. The name of the third author was incorrect. The correct name of the third author is “Lukasz Kilanski.”

The authors regret the error.

Type
Erratum
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , pp. e1
Copyright
Copyright © Materials Research Society 2012

References

Nykänen, Henri, Suihkonen, Sami, Kilanski, Lucasz, Sopanen, Markku, and Tuomisto, Filip: Ga-vacancy Activation Under Low Energy Electron Irradiation in GaN-based Materials, in Reliability and Materials Issues of III–V and II–VI Semiconductor Optical and Electron Devices and Materials II, edited by Ueda, O., Fukuda, M., Shiojima, K., and Piner, E. (Mater. Res. Soc. Symp. Proc. 1432, Warrendale, PA, 2012).Google Scholar