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Growth of Gallium Arsenide on Silicon in Masked, Etched Trenches

Published online by Cambridge University Press:  28 February 2011

J. W. Adkisson ,
T. I. Kamins ,
S. M. Koch ,
J. S. Harris ,
S. J. Rosner Jr. ,
K. Nauka  and
G. A. Reid
J. W. Adkisson
Affiliation:
Stanford University, Dept. of Electrical Engineering, McCullough 226, Stanford CA 94305
T. I. Kamins
Affiliation:
Hewlett-Packard, 3500 Deer Creek Rd., Palo Alto CA 94303-0867
S. M. Koch
Affiliation:
Stanford University, Dept. of Electrical Engineering, McCullough 226, Stanford CA 94305
J. S. Harris
Affiliation:
Stanford University, Dept. of Electrical Engineering, McCullough 226, Stanford CA 94305
S. J. Rosner Jr.
Affiliation:
Hewlett-Packard, 3500 Deer Creek Rd., Palo Alto CA 94303-0867
K. Nauka
Affiliation:
Hewlett-Packard, 3500 Deer Creek Rd., Palo Alto CA 94303-0867
G. A. Reid
Affiliation:
Hewlett-Packard, 3500 Deer Creek Rd., Palo Alto CA 94303-0867
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Abstract

GaAs layers were grown in recessed silicon trenches for monolithic integration of GaAs and silicon devices. These layers were examined using cathodoluminescence (CL) and transmission electron microscopy (TEM). The CL showed no dependence on distance from the sidewall edge within its limit of resolution. Cross-sectional TEM micrographs showed the GaAs grown on the sidewall to depend on the sidewall orientation. Material grown on the near-{111} sidewalls was comparable to that grown on the well bottom, while the GaAs grown on the near-{110} sidewalls showed poorer crystal quality. A photodetector was fabricated in the recessed GaAs/Si; this device could be easily adapted to a monolithically integrated structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 99
Copyright
Copyright © Materials Research Society 1988

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