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Hot Jet Etching through Stencil Masks

Published online by Cambridge University Press:  25 February 2011

M. W. Geis ,
S. W. Pang  and
N. N. Efremow
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
S. W. Pang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
N. N. Efremow
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
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Abstract

This article contains a description of hot jet etching through stencil masks. The dry etching technique does not damage the stencil mask, but anisotropically etches GaAs at rates as high as 10 μm min−1. Resolution less than 50 nm has been demonstrated. At present the etched surfaces are rough, but improvement of the etching technique may result in smooth surfaces.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 143
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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