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Influence of the Film Thickness on the Optical and Electrical Properties of ITO

Published online by Cambridge University Press:  31 January 2011

Man Kin Fung ,
Kai-Yin Cheung ,
Ye Chuan Sun ,
Aleksandra B. Djurišić  and
Wai-Kin Chan
Man Kin Fung
Affiliation:
nofung@hku.hk, The University of Hong Kong, Physics, Hong Kong, Hong Kong
Kai-Yin Cheung
Affiliation:
cky.com@gmail.com, The University of Hong Kong, Physics, Hong Kong, Hong Kong
Ye Chuan Sun
Affiliation:
kevin21.sun@gmail.com, The University of Hong Kong, Physics, Hong Kong, Hong Kong
Aleksandra B. Djurišić
Affiliation:
dalek@hkusua.hku.hk, The University of Hong Kong, Physics, Hong Kong, Hong Kong
Wai-Kin Chan
Affiliation:
waichan@hku.hk, The University of Hong Kong, Chemistry, Hong Kong, Hong Kong
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Abstract

Indium tin oxide (ITO) is widely used for opto-electronic products such as organic light-emitting diodes, organic photovoltaic devices and liquid crystal displays due to its high transparency and electrical conductivity. Since there is a trade-off between the conductivity and transparency of ITO, it is necessary to optimize performances of opto-electronic products by balancing the sheet resistance and transmittance. Both sheet resistance and transmittance are affected by a number of factors such as working temperature, working pressure, oxygen-to-argon ratio during the fabricating process, and thickness. In our study, ITO thin films were deposited on glass substrates by dc sputtering. Effects of ITO with different thicknesses, sheet resistances, and transmission spectra on the performance of bulk heterojunction photovoltaic devices were investigated.

Keywords

photovoltaicsputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1212: Symposium S – Organic Materials and Devices for Sustainable Energy Systems , 2009 , 1212-S11-13
Copyright
Copyright © Materials Research Society 2010

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