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Integrated GaAs Diode Technology for Millimeter and Submillimeter-wave Components and Systems

Published online by Cambridge University Press:  10 February 2011

Thomas W. Crowe ,
Jeffrey L. Hesler ,
William L. Bishop ,
Willie E. Bowen ,
Richard F. Bradley ,
Saini Kamaljeet ,
Steven M. Marazita  and
David W. Porterfield
Thomas W. Crowe
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
Jeffrey L. Hesler
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
William L. Bishop
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
Willie E. Bowen
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
Richard F. Bradley
Affiliation:
National Radio Astronomy Observatory, 2015 Ivy Road, Suite 219 Charlottesville, VA 22903
Saini Kamaljeet
Affiliation:
National Radio Astronomy Observatory, 2015 Ivy Road, Suite 219 Charlottesville, VA 22903
Steven M. Marazita
Affiliation:
Virginia Millimeter Wave, Inc. 706 Forest Street, Suite D Charlottesville, VA 22903
David W. Porterfield
Affiliation:
Virginia Millimeter Wave, Inc. 706 Forest Street, Suite D Charlottesville, VA 22903
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Abstract

GaAs Schottky barrier diodes remain a workhorse technology for submillimeter-wave applications including radio astronomy, chemical spectroscopy, atmospheric studies, plasma diagnostics and compact range radar. This is because of the inherent speed of these devices and their ability to operate at room temperature. Although planar (flip-chip and beam-lead) diodes are replacing whisker contacted diodes throughout this frequency range, the handling and placement of such small GaAs chips limits performance and greatly increases component costs. Through the use of a novel wafer bonding process we have fabricated and tested submillimeter-wave components where the GaAs diode is integrated on a quartz substrate along with other circuit elements such as filters, probes and bias lines. This not only eliminates the cost of handling microscopically small chips, but also improves circuit performance. This is because the parasitic capacitance is reduced by the elimination of the GaAs substrate and the electrical embedding impedance seen by the diodes is more precisely controlled. Our wafer bonding process has been demonstrated through the fabrication and testing of a fundamental mixer at 585 GHz (Tmix < 1200K) and a 380 GHz subharmonically pumped mixer (Tmix < 1000K). This paper reviews the wafer bonding process and discusses how it can be used to greatly improve the performance and manufacturability of submillimeter-wave components.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 631: Symposium AA – Millimeter-/Submillimeter-Wave Technology Materials, Devices and Diagnostics , 2000 , AA2.3
Copyright
Copyright © Materials Research Society 2000

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References

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