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Interfacial Diffusion in a MOCVD Grown Barium Titanate Film
Published online by Cambridge University Press: 10 February 2011
Abstract
A combination of two nondestructive techniques, Grazing Incidence X-ray Reflectivity and High Resolution X-ray Diffraction, is used to study (at around 10Å resolution) the composition profile across a 500Å thick film of BaTiO3 grown epitaxially on (100) MgO by MOCVD. Results from both studies indicate diffusion of Mg to about 250Å into the film at film-substrate interface, consistent with the diffuse ferroelectric phase transition observed in this film. The lattice parameter a shows a progressive decrease as we move into the film from the interface, and an anomalously low value in the Mg-free portion of the film.
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- Copyright © Materials Research Society 2000