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Interfacial Diffusion in a MOCVD Grown Barium Titanate Film

Published online by Cambridge University Press:  10 February 2011

A. Datta
Affiliation:
Department of Physics and Astronomy, Northwestern University, IL 60208-3112 Presently at: NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411 and Materials Science Department, North Carolina State University, Raleigh, NC 27695-7916.
Soma Chattopadhyay
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201. Presently at: NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411 and Materials Science Department, North Carolina State University, Raleigh, NC 27695-7916.
A.G. Richter
Affiliation:
Department of Physics and Astronomy, Northwestern University, IL 60208-3112 Presently at: NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411 and Materials Science Department, North Carolina State University, Raleigh, NC 27695-7916.
J. Kmetko
Affiliation:
Department of Physics and Astronomy, Northwestern University, IL 60208-3112 Presently at: NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411 and Materials Science Department, North Carolina State University, Raleigh, NC 27695-7916.
C. B. Lee
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411 Presently at: NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411 and Materials Science Department, North Carolina State University, Raleigh, NC 27695-7916.
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Abstract

A combination of two nondestructive techniques, Grazing Incidence X-ray Reflectivity and High Resolution X-ray Diffraction, is used to study (at around 10Å resolution) the composition profile across a 500Å thick film of BaTiO3 grown epitaxially on (100) MgO by MOCVD. Results from both studies indicate diffusion of Mg to about 250Å into the film at film-substrate interface, consistent with the diffuse ferroelectric phase transition observed in this film. The lattice parameter a shows a progressive decrease as we move into the film from the interface, and an anomalously low value in the Mg-free portion of the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Glass, A.M., Science 235, p.1003 (1987); J.Harada, in Landolt-Börnstein, Ferroelektrika und verwandte Substanzen, The New Series III 16 a, Springer, Berlin, 1981, p. 66 ff; P. Yeh, Introduction to Photorefractive Nonlinear Optics, Wiley, New York, 1993, Chs. 10 and 11.Google Scholar
2.Jona, F. and Shirane, G., Ferroelectric Crystals, Dover, New York, 1993, Ch. 1.Google Scholar
3.García, A. and Vanderbilt, D., Appl. Phys. Lett. 72 p. 2981 (1998).Google Scholar
4.Davis, G.M. and Gower, M.C., Appl. Phys. Lett. 55, p. 112 (1989); L.A. Willis, B.W. Wessels, D.S. Richeson, and T.J. Marks, Appl. Phys. Lett. 60, p. 41 (1992); K. Ma, J. Zhang, J.Z. Lui, D.F. Cui, Z.H. Chen, Y.L. Zhou, and L. Li, Phys. Status Solidi A 152, p. K11 (1995).Google Scholar
5.Kaiser, D.L., Vaudin, M.D., Rotter, L.D., Wang, Z.L., Cline, J.P., Hwang, C.S., Marinenko, R.B., and Gillen, J.G., Appl. Phys. Lett. 66 p. 2801 (1995).Google Scholar
6.Kim, S., Hishita, S., Kang, Y.M., and Baik, S., J. Appl. Phys. 78 p. 5604 (1995).Google Scholar
7.Hubert, C., Levy, J., Carter, A.C., Chang, W., Kiechoefer, S.W., Horwitz, J.S., and Chrisey, D.B., Appl. Phys. Lett. 71 p. 3353 (1997).Google Scholar
8.Padilla, J. and Vanderbilt, D., Phys. Rev. B 56 p. 1625 (1997).Google Scholar
9.Beckers, J., Schubert, J., Zander, W., Ziesmann, J., Eckau, A., Leinenbach, P., and Buchal, Ch., J. Appl. Phys. 83 p. 3305 (1998).Google Scholar
10.Wills, L.A., Wessels, B.W., Richeson, D.S. and Marks, T.J., Appl. Phys. Lett. 60, p. 42 (1992); B.H. Hoerman, G.M. Ford, L.D. Kaufmann, and B.W. Wessels, Appl. Phys. Lett. 73, p. 2248 (1998).Google Scholar
11.Sanyal, M.K., Radiat. Phys. Chem. 51 p. 487 (1998).Google Scholar
12.Richter, A.G., Durbin, M.K., Yu, C.J., and Dutta, P., Langmuir 14 p. 5980 (1998).Google Scholar
13.Sinha, S.K., Sirota, E.B., Garoff, S., and Stanley, H.B., Phys. Rev. B 38 p. 2297 (1988).Google Scholar
14.Yu, C.-J., Richter, A. G., Datta, A., Durbin, M. K. and Dutta, P., Phys. Rev. Lett. 82 p. 2326 (1999).Google Scholar
15.Sanyal, M.K., Basu, J.K., Datta, A. and Banerjee, S., Europhy. Lett. 36 p. 265 (1996).Google Scholar
16.Sanyal, M.K., Basu, J.K. and Datta, A., Physica B 248 p. 217 (1998).Google Scholar
17.Banerjee, S., Sanyal, M.K., Datta, A., Kanakaraju, S. and Mohan, S., Phys. Rev. B 54 p. 16377 (1996).Google Scholar
18.Kundu, S., Hazra, S., Banerjee, S., Sanyal, M.K., Mandal, S.K., Chaudhuri, S., and Pal, A.K., J. Phys. D Appl. Phys. 31, p. L73 (1998).Google Scholar
19.Pashley, D.W., in Epitaxial Growth, Part A, Academic Press, New York, 1975, p. 8ff.Google Scholar
20.Sanyal, M.K., Hazra, S., Basu, J.K. and Datta, A., Phys. Rev. B 58, p. R4258 (1998).Google Scholar
21.Chattopadhyay, S., Hwang, J.-H., Teren, A., Mason, T.M., and Wessels, B.W., (unpublished).Google Scholar
22.Singh, N. and Pandey, D., J. Phys.: Condens. Matter 8 p. 4269 (1996).Google Scholar
23.Sastry, P.U.M., Sequeira, A., Rajagopal, H., Dasannacharya, B.A., Balakumar, S., Ilangovan, R., and Ramasamy, P., J. Phys.: Condens. Matter 8 p. 2905 (1996).Google Scholar
24.Aharony, A. and Bruce, A.D., Phys. Rev. Lett. 33 p. 427 (1974).Google Scholar