Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-19T12:16:19.677Z Has data issue: false hasContentIssue false
  • English
  • Français

Isotope Exchange in Hydrogenated Silicon-Oxynitride (SiON) for 1.55μm Optical Waveguide Applications

Published online by Cambridge University Press:  17 March 2011

Jinju Lee ,
Kangguo Cheng ,
Joseph W. Lyding  and
Huub W.M. Salemink
Jinju Lee
Affiliation:
Beckman Institute for Advanced Science and Technology, University of Illinois at Champaign Urbana, IL 61801
Kangguo Cheng
Affiliation:
Beckman Institute for Advanced Science and Technology, University of Illinois at Champaign Urbana, IL 61801
Joseph W. Lyding
Affiliation:
Beckman Institute for Advanced Science and Technology, University of Illinois at Champaign Urbana, IL 61801
Huub W.M. Salemink
Affiliation:
IBM Research Division, Zurich Research Laboratory, Ruschlikon, Switzerland
Get access

Abstract

We report a novel way of reducing the unwanted absorption loss in silicon-oxynitride (SiON) waveguides by replacing nitrogen-hydrogen (N-H) bonds with nitrogen-deuterium (N-D) bonds in an isotope exchange process. D was introduced to SiON layers in an atmospheric D anneal after the deposition of SiON. The deuterated SiON showed a factor of 2 less absorption at 1.51 μm than before the D anneal. This is an additional loss reduction, since a typical pre-anneal in N2 reduces the loss by a factor of 10. Compared to the loss in as-deposited SiON at this wavelength, the loss after D anneal is reduced by a factor of 20. The D annealing temperature varied from 450 to 950 °C. There is a correlation between the loss reduction and the level of isotope exchange in the SiON waveguide, and also, an onset temperature for thermal activation of the isotope exchange. This mechanism is characterized carefully by secondary ion mass spectrometry (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A26.8
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Salemink, H.W.M. Horst, F., Germann, R., Offrein, B.J. and Bona, G.L. Mat. Res. Soc.Symp. Proc. 254, 255 (1999).Google Scholar
[2] , Germann, Salemink, H.W.M. Beyeler, R., Bona, G.L. Horst, F., Massarek, I. and Offrein, B.J., Electrochem. Soc. In press.Google Scholar
[3] Li, Y.P. Henry, C.H. IEE Optoelctron., 143, 263 (1996).Google Scholar
[4] Takato, N., Jinuji, K., Yasu, M., Toba, H., Kawachi, M., IEEE j. lightwave Technol., 6, 1003 (1988).Google Scholar
[5] Lyding, J.W., Hess, K. and Kizilyalli, I.C., Appl.Phys. Lett., 68, 2526 (1996).Google Scholar
[6] Kizilyalli, I.C., Lyding, J.W. and Hess, K., IEEE Electron Device Lett., 18, 81 (1997).Google Scholar
[7] Lee, J., Aur, S., Eklund, R., Hess, K., and Lyding, J.W. J. Vac. Sci. Technol., A16, 1762 (1998).Google Scholar
[8] Dannberg, P., Braeuer, A., SPIE 2212, 478 (1994).Google Scholar
[9] Lee, J., Cheng, K., Lyding, J.W., and Salemink, H.W.M. in preparation.Google Scholar