Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T12:23:21.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Probing of the Dynamics of Ga Interactions on Si(lO0)

Published online by Cambridge University Press:  28 February 2011

Karen L. Carleton ,
Bernard Bourguignon ,
Russell V. Smilgys ,
Doeke J. Oostra  and
Stephen R. Leone
Karen L. Carleton
Affiliation:
present address, Department of Chemistry, University of California, Berkeley, CA 94720
Bernard Bourguignon
Affiliation:
present address, Laboratoire de Photophysique Moleculaire, Universite de Paris-Sud, Orsay, France
Russell V. Smilgys
Affiliation:
Joint Institute for Laboratory Astrophysics, National Bureau of Standards and University of Colorado, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309–0440
Doeke J. Oostra
Affiliation:
Joint Institute for Laboratory Astrophysics, National Bureau of Standards and University of Colorado, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309–0440
Stephen R. Leone
Affiliation:
staff member, Quantum Physics Division, National Bureau of Standards
Get access

Abstract

The kinetics of desorption and scattering of Ga atoms on Si(100) surfaces are probed by laser-induced fluorescence detection of the gas phase species and by Auger analysis of the surface composition. The kinetic parameters are correlated with the structures deduced by LEED and the coverages determined by Auger spectroscopy. The binding energy of Ga on Si(100) is found to be a function of coverage, starting out at 2.9 eV at low coverages and decreasing to 2.3 eV for coverages between 0.5 and 1 monolayer (ML). Ordered growth is always observed for coverages below 1 ML, but above one monolayer the growth of islands occurs on the wellordered monolayer. The onset of island formation is a strong function of temperature. A model is proposed for the structures and energetics involved in the growth of Ga on Si(100). The results are discussed in terms of the implications for epitaxial growth of GaAs on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 45
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Carleton, K.L. and Leone, S.R., J. Vac. Sci. Technol. B 5, 1141 (1987).CrossRefGoogle Scholar
2 Zinke-Allmang, M. and Feldman, L.C., Surf. Sci. 191, L749 (1987).CrossRefGoogle Scholar
3 Zinke-Allmang, M., Feldman, L.C., Patel, J.R., and Tully, J.C., to be published.Google Scholar
4 Bringans, R.D., Uhrberg, R.I.G., Olmstead, M.A., Bachrach, R.Z., and Northrup, J.E., Phys. Scripta, T 17, 7 (1987).Google Scholar
5 Bourguignon, B., Smilgys, R.V., and Leone, S.R., Surf. Sci. (submitted).Google Scholar
6 Carleton, K.L., Bourguignon, B., and Leone, S.R., Surf. Sci. (in press).Google Scholar
7 Bourguignon, B., Carleton, K.L., and Leone, S.R., Surf. Sci. (submitted).Google Scholar