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Lattice Defects and Plastic Deformation of CoSi2

Published online by Cambridge University Press:  01 January 1992

M. Yamaguchi
Affiliation:
Department of Metal Science and Technology, Kyoto University Kyoto 606, Japan
Y. Shirai
Affiliation:
Department of Metal Science and Technology, Kyoto University Kyoto 606, Japan
H. Inui
Affiliation:
Department of Metal Science and Technology, Kyoto University Kyoto 606, Japan
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Abstract

Current knowledge of the properties of vacancies and the slip behavior and mechanisms of CoSi2 is reviewed based on the results of our recent studies on CoSi2. The concentration of thermal vacancies in CoSi2 is much higher than that in ordinary metals and alloys with melting points comparable with that of CoSi2. Vacancy defects are easily retained in CoSi2 even after air cooling from high temperatures. An annealing stage observed at around 310 K after electron irradiation is concluded to occur by the migration of vacancies to form secondary defects. Peculiar phenomena recently reported on CoSi2 such as an anisotropy of electrical resistivity and the climbing of dislocations at room temperature can be understood on the basis of the current knowledge of defect properties. Slip in CoSi2 occurs along <100> on {001} at low temperatures. The selection of {001}<100> as the primary slip system in CoSi2 can be interpreted in terms of high covalency of Co-Si bonding. a<100> dislocations have a strong tendency to align along their edge orientation and are dissociated into two a / 2<100> partial dislocations separated by a stacking fault on {001}. {001}<100> slip is augmented by {111}<110> and {110}<110> slip at high temperatures. Thermal activation analysis of deformation indicates that while deformation at low temperatures is controlled by the Peierls mechanism, the greatly increased concentration of thermal vacancies influence the mobility of dislocations at high temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Anton, D.L. and Shah, D.M., in High-Temperature Ordered Intermetallic Alloys III, edited by Liu, C.T., Taub, A.I., Stoloff, N.S. and Koch, C.C. (Mater. Res. Soc. Proc. 133, Pittsburgh, PA, 1989)p.361.Google Scholar
2. Sauer, R.W. and Freise, E.J., in Anisotropy in Single-Crystal Refractory Compounds, Vol.1, edited by Vahldiek, F.W. and Merson, S.A. (Plenum, New York, 1968) p. 459.Google Scholar
3. Takeuchi, S., Hashimoto, T. and Shibuya, T., in Intermetallic Compounds • Structure and Mechanical Properties -. edited by Izumi, O. (Japan Inst. Metals, 1991) p.645 ; J. Mater. Sci. 27, 1380(1992).Google Scholar
4. Ito, K., Inui, H., Hirano, T. and Yamaguchi, M., Mater. Sci. Eng. A, 152, 153 (1992).Google Scholar
5. Anongba, P. and Steinemann, S., presented at 1991 Colloque Plastcité at Metz.Google Scholar
6. Suzuki, K. and Takeuchi, S., to be published in Intermetallics, 1 (1992).Google Scholar
7. Ditchek, B.M., Cryst., J. Growth, 69, 207 (1984).Google Scholar
8. Hirano, T. and Kaise, M., J. Appl. Phys., 68, 627 (1990).Google Scholar
9. Shah, D.M., Berczik, D., Anton, D.L. and Hecht, R., Mater. Sci. Eng. A, 155, 45 (1992).Google Scholar
10. Shirai, Y. and Yamaguchi, M., Mater. Sci. Eng. A, 152, 173 (1992).Google Scholar
11.See for example, Takamura, J., Shirai, Y., Furukawa, K. and Nakamura, F., Mater. Sci. Forum, 1518, 809(1987).Google Scholar
12. Ito, Y., Shirai, Y., Yamada, Y. and Yamaguchi, M., in this proceedings.Google Scholar
13. Balogh, A.G, Bottyan, L., Brauer, G., Dezsi, I. and Molnar, B., J. Phys. F, 16, 1725 (1986).Google Scholar
14. Tanaka, K., Numakura, H. and Koiwa, M., private communication.Google Scholar
15. Evans, A.G. and Pratt, P.L., Phil. Mag., 21, 951 (1970).Google Scholar
16. Liu, T.S. and Li, C.H., J. Appl. Phys., 35, 3325(1964).Google Scholar
17. Irving, P.E. and Beevers, C.J., J. Mater. Sci., 7, 23 (1972).Google Scholar
18. Barraclogh, K.G. and Beevers, C.J., J. Mater. Sci., 4, 518 (1969).Google Scholar
19. Geller, S. and Wolontis, V.M., Acta Crystallogr., 8, 83 (1955).Google Scholar