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Lattice Defects Generated by Ion Implantation into Submicron Si Areas

Published online by Cambridge University Press:  21 February 2011

M. Tamura ,
S. Shukuri  and
Y. Kawamoto
M. Tamura
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
S. Shukuri
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
Y. Kawamoto
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distributions of lattice defects generated in high-dose (5 x 1015 ions/cm2 ), P, As, BF2 and B implanted, annealed submicron Si areas as a function of implantation areas. Monte Carlo simulation is also adapted for ion-implantation into submicron Si through fine mask patterns to predict the effect of mask size on spatial damage and impurity profiles. Simulation results predict that the above profiles have a strong mask size dependence for regions below the critical size, where the dopant concentration decreases and damage depth moves toward the surface-side with a reduced implantation area. Some experimental results support simulation results, although most defects, mainly in the P and As implantation, are confined within the original amorphized layers, independent of mask size. However, in BF2 and B implantation, unexpected defect behavior such as variations in defect distribution from one implanted layer to another is found to occur in submicron regions doped by implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 143
Copyright
Copyright © Materials Research Society 1989

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References

1. Miyauchi, E., Arimoto, H., Bamba, Y., Takamori, A., Hashimoto, H. and Utsumi, T., Jpn. J. Appl. Phys. 22, L243 (1983).Google Scholar
2. Shukuri, S., Ishitani, T., Tamura, M. and Wada, Y., 18th Symp. Ion Impl. and Submicron Fabrication (Riken, March 1987) p. 73.Google Scholar
3. Tamura, M., Shukuri, S. and Madokoro, M., J. Vac. Sci. Technol. B 6,996 (1988).Google Scholar
4. Tamura, M., Horiuchi, M. and Kawamoto, Y., Nucl. Instr. and Meth. B 37/38, 329 (1989).Google Scholar
5. Ishitani, T., Shimase, A. and Hosaka, S., Jpn. J. Appl. Phys. 22, 329 (1983).Google Scholar
6. Moliere, G., Z. Nat. A 2, 133 (1947).Google Scholar
7. Horiuchi, M. and Tamura, M., Nucl. Instr. and Meth. B 37/38, 285 (1989).Google Scholar
8. Tamura, M. and Horiuchi, M., Jpn. J. Appl. Phys. 27, 2209 (1988).Google Scholar
9. Lietoilas, A., Gibbons, J. F. and Sigmon, T. W., Appl. Phys. Lett. 36, 765 (1980).Google Scholar
10. Nieh, C. W. and Chen, L. J., J. Appl. Phys. 60, 3114 (1986).Google Scholar
11. Tsai, M. Y., Day, D. S., Streetman, B. G., Williams, P. and Evans, C. A. Jr. J. Appl. Phys. 50, 188 (1979).Google Scholar
12. Nieh, C. W. and Chen, L. J., J. Appl. Phys. 60, 7546 (1986).Google Scholar
13. Tamura, M. and Horiuchi, M., to be published in J. Crystal Growth.Google Scholar