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Liquid Etch of Moisture Resistant Polyimides

Published online by Cambridge University Press:  15 February 2011

D. E. Fjare
Affiliation:
Amoco Chemical Company Ultradel® Microelectronic Coatings Department Naperville, Illinois 60566
A. J. Beuhler
Affiliation:
Amoco Chemical Company Ultradel® Microelectronic Coatings Department Naperville, Illinois 60566
C. A. Navar
Affiliation:
Amoco Chemical Company Ultradel® Microelectronic Coatings Department Naperville, Illinois 60566
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Abstract

A new wet patterning technology which is particularly well suited to moisture resistant polyimides is described. The key feature is a two step wet-etch with the photoresist patterned and the amic acid etched in sequential steps. A higher degree of sidewall control than previously attained is possible because the etchant can be tailored specifically for the polyamic acid. The etchants operate by the polarity shift mechanism conventionally used to etch polyamic acids with hydroxide bases, but instead use the weaker aliphatic amines as the active base component. Alcohols are used to adjust the polarity of the solvent.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Rucker, T., Murali, V., Shukla, R., International Conference on Multichip Modules Proceedings, (1992), p. 251.Google Scholar
2. Neuhaus, H. J., International Conference on Multichip Modules Proceedings, (1992), p. 256.Google Scholar
3. Linde, H. G. and Gleason, R. T., J. Polymer Science: Part B: Polymer Physics, Vol.26, 1485 (1989).Google Scholar
4. Thompson, L. F., Wilson, C. G., Bowden, M. J. (eds), Introduction to Microlithoqraphy, ACS Symposium Series 219, (American Chemical Society, Washington, D.C., 1983).Google Scholar
5. Tu, Y. O. and Ouano, A.C., IBM J. Res. Develop, 21:2, 131 (1977).Google Scholar
6. Diener, C. E. and Susko, J. R., IBM J. Res. Develop, 21:2, pp. 353364.(1977).Google Scholar