Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T12:56:01.122Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence characterization of InGaN/GaN vertical heterostructures grown on GaN nanocolumns

Published online by Cambridge University Press:  01 February 2011

Robert Armitage
Robert Armitage*
Affiliation:
armitage@riken.jp, United States
Get access

Abstract

The photoluminescence of MBE-grown InGaN/GaN vertical heterostructures on c-axis oriented GaN nanocolumns is investigated. Nanocolumnar InGaN heterostructures exhibit luminescence efficiencies greater than 20% for peak emission wavelengths as long as 540 nm. Compared to otherwise identical InGaN samples with larger median column diameters, the luminescence is blue-shifted and exhibits reduced efficiency for diameters less than about 50 nm. Growth of InGaN on GaN columns with a broad distribution of diameters results in broad-band photoluminescence that appears white to the eye and has efficiency as high as 23%.

Keywords

nitrideoptical propertiesnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL16-04
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Calleja, E. et al., Phys. Rev. B 62, 16826 (2000).Google Scholar
2. Björk, M. T. et al., Appl. Phys. Lett. 80, 1058 (2002).Google Scholar
3. Rivera, C. et al., Phys. Rev. B 75, 045316 (2007).Google Scholar
4. Kikuchi, A., Kawai, M., Tada, M., and Kishino, K., Jpn. J. Appl. Phys. 43, L1524 (2004).Google Scholar
5. Bertness, K. A. et al., J. Cryst. Growth 287, 522 (2006).Google Scholar
6. Hsiao, C. L. et al., J. Vac. Sci. Technol. B 24, 845 (2006).Google Scholar
7. Calarco, R. et al., Nano Lett. 5, 981 (2005).Google Scholar
8. Chen, H.-Y. et al., Appl. Phys. Lett. 89, 243105 (2006).Google Scholar
9. Abell, J. and Moustakas, T.D., Appl. Phys. Lett. 92, 091901 (2008).Google Scholar
10. Ramaiah, K. S. et al., Appl. Phys. Lett. 85, 401 (2004).Google Scholar
11. Wetzel, C. and Detchpromm, T., MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) and references therein.Google Scholar
12. Kawakami, Y. et al., Appl. Phys. Lett. 89, 163124 (2006).Google Scholar