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Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

Published online by Cambridge University Press:  25 February 2011

S. Arscott ,
M. Missous ,
L. Dobaczewski ,
P. C. Harness ,
D. K. Maude  and
J. C. Portal
S. Arscott
Affiliation:
Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, United Kingdom.
M. Missous
Affiliation:
Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, United Kingdom.
L. Dobaczewski
Affiliation:
Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, United Kingdom.
P. C. Harness
Affiliation:
Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, United Kingdom.
D. K. Maude
Affiliation:
Service National des Champs Intenses-Centre National de la Recherche Scientifique, 38042 Grenoble, France.
J. C. Portal
Affiliation:
Service National des Champs Intenses-Centre National de la Recherche Scientifique, 38042 Grenoble, France.
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Abstract

Shubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 19
Copyright
Copyright © Materials Research Society 1993

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References

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