Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T10:35:34.918Z Has data issue: false hasContentIssue false
  • English
  • Français

Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

Published online by Cambridge University Press:  01 February 2011

Hang Hu ,
Chunxiang Zhu ,
Y. F. Lu ,
Y. H. Wu ,
T. Liew ,
M. F. Li ,
B.J. Cho ,
W. K. Choi  and
N. Yakovlev
Hang Hu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
Chunxiang Zhu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
Y. F. Lu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
Y. H. Wu
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
T. Liew
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
M. F. Li
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
B.J. Cho
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
W. K. Choi
Affiliation:
Silicon Nano Device Lab, Department of Electrical and Computer EngineeringNational University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:elezhucx@nus.edu.sg
N. Yakovlev
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
Get access

Abstract

Thin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 oC shows an overall high performance, such as a high capacitance density of ∼3.0 fF/νm2, a low leakage current of 2x10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Decoutere, S., Vleugels, F., Kuhn, R., Loo, R., Caymax, M., Jenei, S., Croon, J., Huylenbroeck, S. Van, Rold, M. Da, Rosseel, E., and Coppens, P., Tech. Dig. BCTM 106 (2000).Google Scholar
[2] Kar-Roy, A., Hu, C., Racanelli, M., Compton, C.A., Kempf, P., Jolly, G., Sherman, P. N., Zheng, J., Zhang, Z., and Yin, A., Tech. Dig. IITC 245 (1999).Google Scholar
[3] Zurcher, P., Alluri, P., Chu, P., Duvallet, P., Happ, C., Henderson, R., Mendonca, J., Kim, M., Petras, M., Raymond, M., Remmel, T., Roberts, D., Steimle, B., Stipanuk, J., Straub, S., Sparks, T., Tarabbia, M., Thibieroz, H., and Miller, M., Tech. Dig. IEDM 153 (2000).Google Scholar
[4] Babcock, J. A., Balster, S. G., Pinto, A., Dirnecker, C., Steinmann, P., Jumpertz, R., and Kareh, B. El-, IEEE Electron Device Lett. 22, 230 (2001).Google Scholar
[5] Wilk, G. D., Wallace, R. M., Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).Google Scholar
[6] Chrisey, D. B. and Hubler, G. K., Pulsed Laser Deposition of Thin Films (Wiley, New York, 1994).Google Scholar
[7] Léger, J. M., Haines, J., and Blanzat, B., J. Mater. Sci. Lett. 13, 1688 (1994).Google Scholar
[8] Léger, J.M., Atouf, A., Tomaszewski, P. E., and Pereira, A. S., Phys. Rev. B 48, 93 (1993).Google Scholar
[9] Vickerman, J. C., Secondary Ion Mass Spectrometry: Principles and Applications (Clarendon, Oxford, 1989).Google Scholar
[10] Chaneliere, C., Autran, J. L., Devine, R. A. B., and Balland, B., Materials Science and Engineering R22. 269 (1998).Google Scholar
[11] Blonkowski, S., Regache, M., and Halimaoui, A., J. Appl. Phys. 90, 1501 (2001).Google Scholar