Hostname: page-component-7479d7b7d-m9pkr Total loading time: 0 Render date: 2024-07-15T01:15:55.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Material Removal Mechanisms of Oxide and Nitride CMP with Ceria and Silica-Based Slurries - Analysis of Slurry Particles Pre- and Post-Dielectric CMP

Published online by Cambridge University Press:  15 March 2011

Naga Chandrasekaran
Naga Chandrasekaran*
Affiliation:
sMicron Technology, Inc., 8000 S. Federal Way, P.O. Box 6 Boise, ID 83707, U.S.A
Get access

Abstract

The effect of CMP process parameters (pressure and pad hardness) on the ceria and silica abrasive particle-size distribution (PSD), morphology, and surface composition when polishing oxide and nitride surfaces was investigated in detail. The PSD was observed to shift post-CMP, with ceria and silica exhibiting a decrease and increase, respectively, in the number of particles towards the tail end of the distribution. The shift in ceria PSD was observed to increase as pad hardness increased. An increase in polish pressure and work surface hardness resulted in an equivalent shift in the PSD when polished on a soft pad. The inclusion of an additive reduced the oxide removal rate, and the abrasive particles exhibited the presence of a thin organic coating on the surface. The difference in material removal mechanisms and selectivity when polishing oxide and nitride with ceria and silica-based slurries was also investigated in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 816: Symposium K – Advances in Chemical-Mechanical Polishing , 2004 , K9.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Park, J. G., Katoh, T., Park, J. H., Paik, U., and Kwack, K. D., Rare Metals, 21, 6, (2002).Google Scholar
2. Lu, H. H., Chen, L. M., Wang, C. J., Chen, Y. T., and Yeh, Y. C., VMIC Conference, Sept 7-9, 109, 231, (1999).Google Scholar
3. Parks, G., Chem. Rev., 65, 177, (1965).Google Scholar
4. Cook, L. M., J. Non-Crystalline Solids, 120, 152, (1990).Google Scholar
5. Cornish, D. and Watt, L., Br. Sci. Instr. Res. Assoc. Rep., R295, (1963).Google Scholar
6. Silvernail, W. and Goetzinger, N., Glass Ind., 52, 130, (1971).Google Scholar
7. Iler, R., The Chemistry of Silica (Wiley, NY, 1979).Google Scholar
8. Jiang, M. and Komanduri, R., Wear, 215, 267, (1998).Google Scholar
9. Izumutani, T. in Treatise on Materials Science and Technology, edited by Tomozawa, M. and Doremus, R., (Academic Press, NY, 1979) p. 115.Google Scholar
10. , Ruhle, Advanced Materials 3, 9, 195, (1997).Google Scholar
11. Hu, Y. Z., Gutmann, R. J., and Chow, T. P., J. Electrochemical Society 11, 145, 3919, (1998).Google Scholar
12. Jiang, M., Wood, N. O., and Komanduri, R., J. Eng. Materials and Technology, 120, 304, (1998).Google Scholar
13. Kilbourn, B. T., Cerium – A Guide to its Role in Chemical Technology, Molycorp, Whiteplains, NY, (1992).Google Scholar
14. Park, J. G., Katoh, T., Park, J. H., Paik, U., and Kwack, K. D., Rare Metals 21, 6, (2002).Google Scholar
15. Palla, B. J. and Shah, D. O., J. Dispersion Science and Technology 21 (5), 491, (2000).Google Scholar
16. Chandrasekaran, N., Taylor, T. M., and Sabde, G. M., Mat. Res. Soc. Symp. Proc., 767, 153, (2003).Google Scholar