Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-17T19:13:12.510Z Has data issue: false hasContentIssue false
  • English
  • Français

Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization

Published online by Cambridge University Press:  03 September 2012

R. L. Gunshor ,
L. A. Kolodziejski ,
M. Kobayashi ,
A. V. Nurmikko  and
N. Otsuka
R. L. Gunshor
Affiliation:
Purdue University, West Lafayette IN 47907
L. A. Kolodziejski
Affiliation:
Permanent Address: Massachusetts Institute of Technology, Cambridge, MA 02139
M. Kobayashi
Affiliation:
Purdue University, West Lafayette IN 47907
A. V. Nurmikko
Affiliation:
Brown University, Providence RI 02912
N. Otsuka
Affiliation:
Purdue University, West Lafayette IN 47907
Get access

Abstract

Epilayers of metastable zincblende MnSe and MnTe have been grown by molecular beam epitaxy. The MnSe structures have been used to study magnetic ordering in thin layers by means of optical and magnetic measurements. Preliminary optical reflectance measurements performed on samples of zincblende MnTe indicate a bandgap of approximately 3.15eV, while double barrier quantum structures demonstrate optical transitions corresponding to 2D electron and hole confinement. Optical measurements further provide insight into the band offsets existing between MnTe and CdTe, as well as between MnTe and ZnTe epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 151: Symposium G – Growth, Characterization and Properties of Ultrathin Magnetic Films and Multilayers , 1989 , 141
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Gu, B.P., Hefetz, Y., and Nurmikko, A.V., Appl. Phys. Lett. 48, 1482 (1986).CrossRefGoogle Scholar
2. Chang, S.-K., Lee, D., Nakata, H., Nurmikko, A.V., Kolodziejski, L.A., and Gunshor, R.L., J.Appl.Phys. 62, 4835 (1987).CrossRefGoogle Scholar
3. Wei, S.H. and Zunger, A., Phys. Rev. Lett. 56, 2391, (1986).Google Scholar
4. Ehrenreich, H., Science 235, 1029 (1987).Google Scholar
5. Tersoff, J., Phys. Rev. Lett. 56, 2755 (1986).Google Scholar
6. Furdyna, J.K., and Kossut, J., Superlattice and Microstructure 2, 89 (1986).Google Scholar
7. McCaldin, J.O., and McGill, T.C., J. Vac. Sci. Technol.B 6, 1360 (1988).CrossRefGoogle Scholar
8. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Datta, S., Becker, W.M., and Nurmikko, A.V., IEEE J.Quantum Electron. QE-22, 1666 (1986).CrossRefGoogle Scholar
9. Kolodziejski, L.A., Gunshor, R.L., Nurmikko, A.V., and Otsuka, N., in Thin Film Growth Techniques for Low Dimensional Structures, Farrow, R.F.C., Parkin, S.S.P., Dobson, P.J.,Neave, J.H.,and Arrott, A.S., Eds., New York: Plenum Press, (1987), 247.Google Scholar
10. Lee, D., Chang, S.-K., Nakata, H., Nurmikko, A.V., Kolodziejski, L.A., and Gunshor, R.L.,: Mat. Res. Soc. Proc., 77, 253 (1987).Google Scholar
11. Lee, D., Chang, S.-K., Nakata, H., Nurmikko, A.V., Kolodziejski, L.A., and Gunshor, R.L., J.del Physique C 5, 311 (1987).Google Scholar
12. Furdyna, J.K., Frankel, R.B., and Debska, U., unpublished.Google Scholar
13. Gunshor, R.L., Kolodziejski, L.A., Otsuka, N., Gu, B.P., Hefetz, Y., and Nurmikko, A.V., Superlattice and Microstructures 3, 5 (1987).Google Scholar
14. Kolodjiejski, L.A., Gunshor, R.L., Otsuka, N., Gu, B.P., Hefetz, Y., Nurmikko, A.V., J.Crystal Growth 81, 491 (1987).CrossRefGoogle Scholar
15. Lee, Y. and Ramdas, A.K., Phys. Rev. B 38, 10600 (1988).Google Scholar
16. Allen, J.W., Lucovsky, G., and Mikkelsen, J.C., Solid State Commun. 24, 367 (1977).Google Scholar