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Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface

Published online by Cambridge University Press:  10 February 2011

V. Gopal ,
T. P. Chin ,
A. L. Vasiliev ,
J. M. Woodall  and
E. P. Kvam
V. Gopal
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN.
T. P. Chin
Affiliation:
School of Electrical and Computer Engineering, Purdue University, W. Lafayette, IN.
A. L. Vasiliev
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN.
J. M. Woodall
Affiliation:
School of Electrical and Computer Engineering, Purdue University, W. Lafayette, IN.
E. P. Kvam
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN.
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Abstract

InAs is a narrow band gap semiconductor with potential for such applications as IR detectors, low temperature transistors, etc‥ However, the lack of suitable substrates has hampered progress in the development of InAs based devices. In the present study, InAs was grown by Molecular Beam Epitaxy on (001) GaP substrates. Though this system has a high lattice mismatch, (∼11%), certain MBE growth conditions result in 80% relaxed InAs layers on GaP with the mismatch accommodated predominantly by 90° pure edge dislocations. Misfit dislocation microstructures were studied using Transmission Electron Microscopy. Electrical characterization using lateral conductance and Hall effect measurements were also performed. Preliminary results indicate the possibility of misfit dislocation related conductivity. The possible correlation between interface structure and electrical properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 63
Copyright
Copyright © Materials Research Society 1998

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References

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