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MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates

Published online by Cambridge University Press:  10 February 2011

O. M. Kryliouk ,
T. W. Dann ,
T. J. Anderson ,
H. P. Maruska ,
L. D. Zhu ,
J. T. Daly ,
M. Lin ,
P. Norris ,
H. T. Chai  and
D. W. Kisker
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O. M. Kryliouk
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
T. W. Dann
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
T. J. Anderson
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
H. P. Maruska
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
L. D. Zhu
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
J. T. Daly
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
M. Lin
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
P. Norris
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801
H. T. Chai
Affiliation:
Crystal Photonics Inc., 2615 Westminster Ter., Oviedo, FL 32765
D. W. Kisker
Affiliation:
IBM Research Division, PO Box 218, Yorktown Heights, NY 10598
J. H. Li
Affiliation:
Department of Materials Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The use of the nearly lattice-matched oxide substrates LiGaO2 and LiAlO2 has been explored for growth of GaN by MOCVD. As compared to the quality of films grown on sapphire, only growth on LiGaO2 yielded good quality films, and required use of nitrogen as the carrier gas. Furthermore, high structural quality films were grown on LiGaO2 at temperatures as low as 850°C. Dislocation densities estimated from cross-sectional TEM micrographs were found to be as low as 107 cm-2 . HRTEM studies revealed deformations at the surface of the LiGaO2 adjacent to deposited GaN films, indicating possible interracial reactions which may affect the film properties. The GaN film orientations corresponded directly to the substrate orientation, viz., ({0001}/{001} and {1102}/{101}).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 123
Copyright
Copyright © Materials Research Society 1997

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References

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