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A Model of Amorphous Silicon Layer Regrowth

Published online by Cambridge University Press:  25 February 2011

P. Ling  and
J. Washburn
P. Ling
Affiliation:
Dept. of Material Science, Tsing Hua University, Hsinchu, Taiwan, R.O.C.
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, under DOE Contract No. DE-ACO3-76SFO0098.
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Abstract

A new model which combines heterogenous nucleation and growth process to explain the mechanism of the crystal regrowth of amorphous silicon, in contact with a Si single crystal substrate, is presented. This model explains the effects of substrate orientation and impurity concentration on the kinetics of crystal regrowth. A comparison of experimental results with the predictions of the model is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 47
Copyright
Copyright © Materials Research Society 1985

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References

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