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Molecular Beam Epitaxy of Low Temperature Grown GaAs Photoconductors

Published online by Cambridge University Press:  15 February 2011

D. R. Dykaar ,
D. J. Eaglesham ,
U. D. Keil ,
B. I. Greene ,
P. N. Saeta ,
L. N. Pfeiffer ,
R. F. Kopf ,
S. B. Darack  and
K. W. West
D. R. Dykaar
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
U. D. Keil
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
B. I. Greene
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
P. N. Saeta
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. N. Pfeiffer
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. F. Kopf
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. B. Darack
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We report on the characterization of Low Temperature (LT) epitaxial growth of GaAs photoconductors. Samples were characterized using electro-optic sampling, transient femtosecond reflectivity, transmission electron microscopy, and pulsed terahertz spectroscopy as a function of growth temperature, As4 flux, doping and anneal conditions. We find the strongest effect on pulsewidth to be the temperature of an ex-situ rapid thermal anneal. In addition we find evidence of a temperature threshold for As precipitation. For more than an order of magnitude change in As precipitate density we find no corresponding change in electrical pulsewidth. Doping to 1017/cm3 also produces no change in the measured electrical response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 245
Copyright
Copyright © Materials Research Society 1992

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References

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