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Nanometer-Scale Investigation of Al-Based Alloy Films for Thin-Film Transistor Liquid Crystal Display Arrays

Published online by Cambridge University Press:  10 February 2011

H. Takatsuji ,
Hideo Iiyori ,
S. Tsuji ,
K. Tsujimoto ,
K. Kuroda  and
H. Saka
H. Takatsuji
Affiliation:
IBM Japan Ltd., Display Technology, Yasu-cho, Yasu-gun, Shiga 520–23, Japan
Hideo Iiyori
Affiliation:
IBM Japan Ltd., Display Technology, Yamato-shi, Kanagawa 242, Japan
S. Tsuji
Affiliation:
IBM Japan Ltd., Display Technology, Yamato-shi, Kanagawa 242, Japan
K. Tsujimoto
Affiliation:
ITES Co., Yasu-cho, Yasu-gun, Shiga 520–23, Japan
K. Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464–01, Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464–01, Japan
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Abstract

Annealing effects on Al-Nd (0.19 – 1.82 at. %) thin films deposited on a glass substrate have been investigated. It is found that the resistivity of an Al-Nd-alloy thin film decreases significantly after annealing at 300 °C or higher temperatures. Using cross-sectional transmission electron microscopy (X-TEM), we have observed segregation of Al-Nd inter-metallic precipitates and pure-Al grains during the annealing. The decrease of the resistivity can be attributed to the segregation. Segregation has been also detected from the increase of diffracted X-ray intensities corresponding to Al-Nd inter-metallic compounds in X-ray diffraction (XRD) analysis. Atomic force microscopy (AFM) observation has revealed that the optimum content ratio of Nd in Al-Nd alloys used as interconnect materials for thin-film-transistor liquid crystal display (TFT/LCD) applications is around 0.97 atomic %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 99
Copyright
Copyright © Materials Research Society 1997

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References

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