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Nanorods as a precursor for high quality GaN layers

Published online by Cambridge University Press:  01 February 2011

David Cherns ,
Ian Griffiths ,
Somboon Khongphetsak ,
Sergei Novikov ,
Nicola Farley ,
Richard Campion  and
Tom Foxon
David Cherns
Affiliation:
d.cherns@bris.ac.uk, United States
Ian Griffiths
Affiliation:
i.griffiths@bristol.ac.uk, University of Bristol, Physics, Bristol, United Kingdom
Somboon Khongphetsak
Affiliation:
phxsk@bristol.ac.uk, University of Bristol, Physics, Bristol, United Kingdom
Sergei Novikov
Affiliation:
sergei.novikov@nottingham.ac.uk, University of Nottingham, Physics and Astronomy, Nottingham, United Kingdom
Nicola Farley
Affiliation:
nicola.farley@nottingham.ac.uk, University of Nottingham, Physics and Astronomy, Nottingham, United Kingdom
Richard Campion
Affiliation:
richard.campion@nottingham.ac.uk, University of Nottingham, Physics and Astronomy, Nottingham, United Kingdom
Tom Foxon
Affiliation:
c.thomas.foxon@nottingham.ac.uk, University of Nottingham, Physics and Astronomy, Nottingham, United Kingdom
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Abstract

The density of threading dislocations in GaN/(0001)sapphire films grown by molecular beam epitaxy can be reduced to about 108 cm−2 by growing an intermediate nanorod layer. This paper examines the growth of the nanorods and proposes that threading defects in the overlayer arise either through grain boundaries formed when nanorods coalesce, or through the propagation of dislocation dipoles seen during nanorod growth. Results showing that the latter often terminate or develop into voids during growth are discussed.

Keywords

transmission electron microscopy (TEM)nitridenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL18-15
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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