Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T12:30:56.795Z Has data issue: false hasContentIssue false
  • English
  • Français

The Negative Persistent Photoconductivity in the Deep Quantum Wells

Published online by Cambridge University Press:  25 February 2011

Ikai Lo ,
W. C. Mttchel ,
C. E. Stutz  and
M. Y. Yen
Ikai Lo
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6533
W. C. Mttchel
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6533
C. E. Stutz
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, OH 45433–6533
M. Y. Yen
Affiliation:
University of Dayton, Research Institute, Dayton, OH 45469
Get access

Abstract

We have measured the Shubnikov-de Haas effect and Quantum Hall effect on the AlxGa1−xSb/InAs quantum wells for the A1 composition (x) from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions. It confirmed the prediction of ionized deep donor model that the NPPC effect is a general property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors has the similar property to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. By comparing with the concentration of the DX center-like deep donor in the bulk AlxGa1−xSb, we believe that the ionized deep donors which cause the NPPC in the AlxGa1−xSb,/InAs QW's are the DX center-like deep donors in the AlxGa1−xSb layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 31
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lang, D.V. and Logan, R.A., Phys. Rev. Lett. 39, 635 (1977);Google Scholar
Lang, D.L., Logan, R.A. and Jaros, M., Phys. Rev. B 19, 1015 (1979), for a review seeGoogle Scholar
Mooney, P.M., J Appl. Phys. 67, Rl (1990)Google Scholar
[2] Caswell, N.S., Mooney, P.M., Wright, S.L. and Solomon, P.M., Appl. Phys. Lett. 48, 1093(1986).Google Scholar
[3] Konczewics, L., Litwin-Staszewska, E., Porowski, S., Iller, A., Aulombard, R.L., Robert, J.L. and Joullie, A., Physics 117B &118B, 92 (1983)Google Scholar
[4] Takeda, Y., Zhu, Y. and Sasaki, A., Inst. Phys. Conf. Ser. No. 83, Chapter 4, 203 (1987)Google Scholar
[5] Takeda, Y., Zhu, Y. and Sasaki, A., Inst. Phys. Conf. Ser. No. 91, 243 (1988)Google Scholar
[6] Lo, Dcai, Mitchel, W.C., Manasreh, M.O., Stutz, C.E. and Evans, K.R., Appl. Phys. Lett. 60, 751 (1992).Google Scholar
[7] Tuttle, G., Kroemer, H. and English, J.H., J. Appl. Phys. 65, 5239 (1989).Google Scholar
[8] Lo, Ikai, Mitchel, W.C., Perrin, R.E., Messham, R.L. and Yen, M.Y., Phys. Rev. B43, 11787(1991).Google Scholar