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New Approach to Growth of High-Quality GaAs Layers on Si Substrates

Published online by Cambridge University Press:  28 February 2011

Jukka Varrio ,
Arto Salokatve ,
Harry Asonen ,
Minna Hovinen ,
Markus Pessa ,
Koichi Ishida  and
Hiroshi Kitajima
Markus Pessa
Affiliation:
Department of Physics, Tampere University of Technology, P.O.Box 527, 33101 Tampere, Finland
Hiroshi Kitajima
Affiliation:
NEC Corporation, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 213, Japan
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Abstract

GaAs layers were grown on Si (001) substrates by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). They were examined by transmission electron microscopy, doublecrystal X-ray diffraction and Rutherford backscattering/channeling technique. Initial layer growth in both MEE and MBE was governed by three-dimensional nucleation but a stronger tendency for GaAs islands to align along the surface steps of Si was observed in the case of MEE. There was no measurable tilt between the (001) planes of GaAs and Si if growth was initiated by MEE at low temperature, prior to further growth by MBE at higher temperatures. On the contrary, the tilt angle was 0.34• when the entire structure was prepared by conventional two-step MBE. Rutherford backscattering measurements indicated a significant reduction in the density of defects throughout MEE/MBE GaAs in comparison with MBE GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 91
Copyright
Copyright © Materials Research Society 1988

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