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Nonlinear Dielectric Relaxation of Mn Doped Polycrystalline (Ba,Sr)TiO3 Thin Films Over the Temperature Range of 4.2 - 473 K

Published online by Cambridge University Press:  10 February 2011

J.D. Baniecki ,
R.B. Laibowitz ,
T.M. Shaw ,
P.R. Duncombe ,
D.E Kotecki ,
H. Shen ,
J. Lian  and
Q.Y. Mat
J.D. Baniecki
Affiliation:
Dept. of Electrical Engineering, Columbia University, NY, NY 10027 IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
R.B. Laibowitz
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
T.M. Shaw
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
P.R. Duncombe
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
D.E Kotecki
Affiliation:
IBM Microelectronics Division, Hopewell Jct., NY 12533
H. Shen
Affiliation:
Siemens Microelectronics Inc., Hopewell Jct., NY 12533
J. Lian
Affiliation:
Siemens Microelectronics Inc., Hopewell Jct., NY 12533
Q.Y. Mat
Affiliation:
Dept. of Electrical Engineering, Columbia University, NY, NY 10027
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Abstract

We have investigated the dielectric relaxation currents of Mn doped polycrystalline Ba0.7Sr0.3TiO3 (BSTO) thin films as a function of applied electric field and temperature (4.2 - 473 K). The dielectric relaxation currents followed a power law time dependence, J(t) = Jot-n, over the entire temperature range. Plots of log(Jo) vs. reciprocal temperature were not linear and showed slopes approaching values of 0.35 eV at high temperatures which rapidly decreased to 0.25 meV at lower temperatures. The relaxation currents were found to be nonlinear with applied field. The observed nonlinearity of the field dependence of the relaxation currents can be understood in terms of the nonlinear relaxation component of the total capacitance. An equivalent circuit model for a paraelectric BSTO thin film capacitor is presented and possible polarization mechanisms are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 23
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Kotecki, D.E., Integrated Ferroelectrics, Vol. 16, 1 (1997)Google Scholar
[2] Streiffer, S.K., Basceri, C., Kingon, A.I., Lipa, S., Bilodeau, S, Carl, R., and Buskirk, P.C. van, Mater. Res. Soc. Symp. Proc. 415, 219 (1996)Google Scholar
[3] Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Duncombe, P.R., Neumayer, D.A., Kotecki, D.E., Shen, H., Ma, Q.Y., Appl. Phys. Lett., Jan. 26, (1998)Google Scholar
[4] Numata, K., Fukuda, Y., Aoki, K., Okuno, Y., and Nishimura, A., IEICE Trans. Electron., Vol. E80–C. No. 7, July, 1043, (1997)Google Scholar
[5] Baniecki, J.D. Laibowitz, R. B., Shaw, T. M., Saenger, K. L., Duncombe, P. R., Cabral, C. Kotecki, D.E. Shen, H. and Lian, J. Ma, Q.Y., Journal of the European Ceramic Society, in press Google Scholar
[6] Buskirk, P.C. Van, Bilodeau, S.M., Roeder, J.F., Kirlin, P.S., Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan) Vol. 35, No. 4B, 2520 (1996)Google Scholar
[7] Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Duncombe, P.R., Neumayer, D.A., Copel, M., Kotecki, D.E., Shen, H., Ma, Q.Y., Mater. Res. Soc. Symp. Proc. 493, pp. 27–32 (1998)Google Scholar
[8] Dietz, G. W. and Waser, Rainer, Integrated Ferroelectrics Vol. 10, pp. 39–51 (1995).Google Scholar
[9] Schumacher, M. and Waser, R., Integrated Ferroelectrics, Vol. 22, pp 109–121 (1998)Google Scholar
[10]Fukuda, Y., Haneda, H., Sakaguchi, I., Numata, K., Aoki, K., Nishimura, A., Jpn. J. Appl. Phys. Vol. 36, Part 2, No. 11B, L1514 (1997)Google Scholar
[11] Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Duncombe, P.R., Neumayer, D.A., Kotecki, D.E., Shen, H., Ma, Q.Y., Integrated Ferroelectrics, in press Google Scholar
[12] Basceri, C., Streiffer, S.K., Kingon, A.I., Waser, R., J.Appl. Phys. 82(5), 1 Sept. (1997)Google Scholar
[13] Waser, R. and Lohse, O., Integrated Ferroelectrics Vol. 21, pp. 27–40 (1998).Google Scholar
[14] , Mott and , Davis, Electronic Processes in Non-Crytalline Materials, Clarendon Press, Oxford (1979)Google Scholar
[15] Kliem, H., Kraus, H., Arlt, G., Int. Conf. on Prop. and Appl. of Diel. Materials, 110 (1985)Google Scholar