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Novel Sulfur Treatment of SiO2 Surface for Poly Silicon Growth on SiO2/Si Structure

Published online by Cambridge University Press:  21 February 2011

Kun-Chih Wang ,
Huey-Liang Hwang  and
Tri-Rung Yew
Kun-Chih Wang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
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Abstract

This paper presents the results of surface cleaning and passivation of Si surfaces and sulfurized SiO2 surfaces for the growth of Si/SiO2/Si structures. Silicon surfaces were cleaned by the conventional cleaning process prior to the growth of silicon oxide, in which Si wafers were vibrated in ACE and TCE solutions, boiled in H2SO4 solution, rinsed in DI water, and dipped in HF solution. A polycrystalline silicon film was deposited using SiH4/H2 gas mixtures after the subsequent surface cleaning and sulfur treatment on the surface of SiO2/Si at 250° C. Sulfurization of SiO2 surfaces using (NH4)2Sx (amonia sulfide with excess sulfur) and (NH4)2S was compared to investigate the influence of surface treatment. The passivation of SiO2 surfaces via hydrogen plasma was also investigated. Both the SiO2 and the silicon layers were grown in a plasma-enhanced chemical vapor deposition (PECVD) system. The sulfurized SiO2 surface contributed to the low temperature (≈250°C) poly-Si growth on SiO2/Si. The results of this technique are essential to thin film transistor (TFT) and silicon-on-insulator (SOI) device fabrication. The interface quality between layers of deposited Si/SiO2/Si and grain size of poly-Si were examined by cross section transmission electron microscopy (XTEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 125
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Iverson, R.B. and Reif, R., J. Appl. Phys., 62, 1675 (1987).Google Scholar
2. Serikawa, T., Shirai, S., and Okamoto, A., Jpn. J. Appl. Phys., 28, L1871 (1989).Google Scholar
3. Sandroff, C.J., Nottenburg, R.N., Bischoff, J.C., and Bhat, R., Appl. Phys. Lett., 51, 33 (1987)Google Scholar
4. Iyer, R., Chang, R.R., Dubey, A., and Lile, D.L., J. Vac. Sci. Technol., B6, 1174 (1988)Google Scholar
5. Wang, K.C., Hwang, H.L., Kung, C.Y., and Yew, T.R., Mat. Res. Soc. Symp. Proc., 259, 137 (1992).Google Scholar
6. Mohri, M., Kakinuma, H., Sakamoto, M., and Sawai, H., Jpn. J. Appl. Phys., 30, L799 (1991)Google Scholar
7. Kumeda, K., Yoneawa, Y., Morimoto, A., Suda, S., and Shimizu, T., J. Non. Cryst. Solid, 59&60, 775 (1983).Google Scholar
8. Hayashi, S., J. Non. Cryst. Solid, 59&60, 779 (1983).Google Scholar
9. Hsu, K.C., Chang, H., and Hwang, H.L., Mat. Res. Soc. Symp.Proc., 258, 69 (1992).Google Scholar
10. Hsu, K.C., Chang, H., and Hwang, H.L., Appl. Phys. Lett., 61(17), 2075 (1992); J. Appl. Phys., 73 (10), May issue. (1993).Google Scholar