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Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

Published online by Cambridge University Press:  26 February 2011

W. Wijaranakula ,
Q. S. Zhang ,
K. Takano  and
H. Yamagishi
W. Wijaranakula
Affiliation:
Shin-Etsu, SEH America, Inc., 4111 Northeast 112th Avenue, Vancouver, WA 98682, USA
Q. S. Zhang
Affiliation:
Shin-Etsu, SEH America, Inc., 4111 Northeast 112th Avenue, Vancouver, WA 98682, USA Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331, USA
K. Takano
Affiliation:
Shin-Etsu Hondotai, Co., Ltd, Corporate Research and Development Center, Isobe 2–13–1, Annaka, Gunma, 379–01, Japan
H. Yamagishi
Affiliation:
Shin-Etsu Hondotai, Co., Ltd, Corporate Research and Development Center, Isobe 2–13–1, Annaka, Gunma, 379–01, Japan
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Abstract

Numerical simulation of point defect distributions in a growing Czochralski silicon crystal with an abrupt change in the crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the silicon interstitials and the flow pattern defects and thus the crystal growth rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 101
Copyright
Copyright © Materials Research Society 1995

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