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Oxygen Precipitation Effects in Degenerately – Doped Silicon

Published online by Cambridge University Press:  15 February 2011

G. A. Rozgonyi ,
R. J. Jaccodine  and
C. W. Pearce
G. A. Rozgonyi
Affiliation:
North Carolina State University, Raleigh, N.C.,
R. J. Jaccodine
Affiliation:
Lehigh University, Bethlehem, PA.
C. W. Pearce
Affiliation:
Western Electric, Allentown, PA.
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Abstract

In this paper we report preliminary observations of oxygen precipitation in degenerately-doped silicon using etching, optical microscopy and transmission electron microscopy. It was found that n+ material was resistant to precipitation, but p+ material precipitated readily. A multistep heat treatment starting with a low temperature step to achieve a high supersaturation ratio was sucessfully used to induce precipitation in n+ material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 181
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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