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Perspectives of Porous Silicon Multilayer Technology

Published online by Cambridge University Press:  09 August 2011

M. Thönissen*
Affiliation:
Research center Jülich, D-52425 Jülich, Germany, m.thoenissen@fz-juelich.de
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Abstract

The exact control and adjustment of the etch parameters is important for the fabrication of well defined and reproducible devices based on porous silicon (PS) multilayers. In this paper the etch parameters “electrolyte volume” and “diffusion in the electrolyte” will be discussed as specific problems during a commercial fabrication of multilayer applications. Additionally the stability of the filter characteristics of multilayer systems will be analyzed by changing the climatic environments. New perspectives of multilayer applications will be given, e. g. the electrical control of filters, spatially graded interference filters and multiple interference filters on one sample.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Berger, M. G. et al., J. Phys. D: Appl. Phys. 27, 1333 (1994)Google Scholar
2. Berger, M. G. et al., Mat. Res. Soc. Symp. Proc. 358, 327 (1995)Google Scholar
3. Vincent, G., Appl. Phys. Lett. 64, 2367 (1994)Google Scholar
4. Buttard, D. et al., Thin Solid Films 276, 6972 (1996)Google Scholar
5. Mazzoleni, C., Pavesi, L., Appl. Phys. Lett. 67, 2983 (1995)Google Scholar
6. Wu, Xing-Long et al., Appl. Phys. Lett. 68, 611 (1996)Google Scholar
7. Araki, M. et al., Jap. J. Appl. Phys. 35 (2B), 1041 (1996)Google Scholar
8. Berger, M. G. et al., “Optical interference coatings”, Florin Abeles ed., Proc. SPIE 2253, 865 (1994)Google Scholar
9. Loni, A. et al., Proceedings of the IEE colloquium “Microengineering Applications in Optoelectronics”, 27th February, 1996, London, (Digest No.96/39)Google Scholar
10. Kruger, M. et. al., Proceedings of the 26th European solid state device research conference, ISBN 2-86332-196-X, 1996 Google Scholar
11. Pavesi, L., Porous silicon dielectric multilayers and microcavities, La Rivista del Nuovo Cimento, 1997 Google Scholar
12. Thonissen, M., Berger, M. G., Theiβ, W., Hilbrich, S., Krüger, M., Arens-Fischer, R., Billat, S., Lerondel, G., Lüth, H., “Depth gradients in porous silicon: how to measure them and how to avoid them” Mat. Res. Soc. Symp. Proc. 1996 Google Scholar
13. Berger, Michael, PhD thesis, University of Aachen, Germany, 1996 Google Scholar
14. Thönissen, M., Berger, M. G., Billat, S., Hilbrich, S., Lerondel, G., Krüger, M., Grosse, P., Lüth, H., “Analysis of the depth homogeneity of p-PS by reflectance spectroscopy”, Thin Solid Films, 1996 Google Scholar
15. Albery, J. ed., Electrode kinetics, Oxford Chemistry series, 1975 Google Scholar
16. Riddiford, A. C. ed., Advances in electrochemistry and electrochemical engineering, McGraw-Hill, 1965 Google Scholar
17. Lehmann, Volker, PhD thesis, University of Erlangen, Germany, 1988 Google Scholar
18. Thonissen, Markus, PhD thesis, University of Aachen, Germany, 1998 Google Scholar
19. Zhang, X. G., Collins, S. D., Smith, R. L., J. Electrochem. Soc., 136, 1561 (1989)Google Scholar
20. Yon, J. J., Barla, K., Herino, R., Bomchil, G., J. Appl. Phys., 62, 10421048 (1987)Google Scholar
21. Kruger, M., PhD thesis, University of Aachen, Germany, 1997 Google Scholar
22. Theiss, W., Optical properties of porous silicon, RWTH Aachen 1995 Google Scholar
23. Khoo, lam-Chon ed., Liquid Crystals, John Wiley & Sons Inc., 1995 Google Scholar
24. Thönissen, M. et. al., Proceedings of the PSST98, Mallorca, acceptedGoogle Scholar
25. Hunkel, D. et al., EMRS 98, Strasbourg, Proceedings in “Thin solid films”, acceptedGoogle Scholar