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Polycrystalline Silicon Films Formed by Solid-Phase Crystallization of Amorphous Silicon: the Substrate Effects on Crystallization Kinetics and Mechanism

Published online by Cambridge University Press:  10 February 2011

Y.-H. Song ,
S.-Y. Kang ,
K. I. Cho ,
H. J. Yoo ,
J. H. Kim  and
J. Y. Lee
Y.-H. Song
Affiliation:
Semiconductor Division, ETRI, Taejon 305-600, KOREA
S.-Y. Kang
Affiliation:
Semiconductor Division, ETRI, Taejon 305-600, KOREA
K. I. Cho
Affiliation:
Semiconductor Division, ETRI, Taejon 305-600, KOREA
H. J. Yoo
Affiliation:
Semiconductor Division, ETRI, Taejon 305-600, KOREA
J. H. Kim
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon 305-701, KOREA
J. Y. Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon 305-701, KOREA
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Abstract

The substrate effects on the solid-phase crystallization of amorphous silicon (a-Si) have been extensively investigated. The a-Si films were prepared on two kinds of substrates, a thermally oxidized Si wafer (SiO2/Si) and a quartz, by low-pressure chemical vapor deposition (LPCVD) using Si2H6 gas at 470 °C and annealed at 600 °C in an N2 ambient for crystallization. The analysis using XRD and Raman scattering shows that crystalline nuclei are faster formed on the SiO2/Si than on the quartz, and the time needed for the complete crystallization of a-Si films on the SiO2/Si is greatly reduced to 8 h from ˜15 h on the quartz. In this study, it was first observed that crystallization in the a-Si deposited on the SiO2/Si starts from the interface between the a-Si film and the thermal oxide of the substrate, called interface-induced crystallization, while random nucleation process dominates on the quartz. The very smooth surface of the SiO2/Si substrate is responsible for the observed interface-induced crystallization of a-Si films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 243
Copyright
Copyright © Materials Research Society 1997

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