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Properties of Patterned Gallium Arsenide on Silicon

Published online by Cambridge University Press:  28 February 2011

R.J. Matyi ,
H. Shichijo ,
T.S. Kim  and
H.L. Tsai
R.J. Matyi
Affiliation:
Central Research Laboratories Texas Instruments, Inc. Dallas, TX 75265
H. Shichijo
Affiliation:
Central Research Laboratories Texas Instruments, Inc. Dallas, TX 75265
T.S. Kim
Affiliation:
Central Research Laboratories Texas Instruments, Inc. Dallas, TX 75265
H.L. Tsai
Affiliation:
Central Research Laboratories Texas Instruments, Inc. Dallas, TX 75265
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Abstract

The growth of GaAs on Si by MBE through openings in an oxide or nitride represents a convenient means for achieving monolithic GaAs/Si integration. We have examined a number of the materials growth and processing issues that must be resolved in order to achieve this goal. Some of the specific areas that have been investigated are (a) the effect of trench etching on the morphology of the patterned GaAs; (b) the dependence of patterned feature size on Hall mobility in both as-grown and postgrowth annealed samples; (c) the effect of annealing on the defect structure in the transition region from single crystal GaAs to polycrystalline growth; (d) the dependence of GaAs MESFET performance on proximity to the polycrystal transition; and (e) the performance of Si MOS devices following the GaAs MBE growth. Specific growth and processing issues concerning the integration of GaAs and Si device functions have also been examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 105
Copyright
Copyright © Materials Research Society 1988

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References

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