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Raman Gain in Silicon Using Highly Confined Waveguide Structure
Published online by Cambridge University Press: 01 February 2011
Abstract
We show ultra-fast Raman gain dynamics in submicron-size silicon-on-insulator strip waveguide. Using high confinement structures and pico-second pump pulses, we show 6-dB net nonlinear gain with 20.7-W peak pump power in a 7-mm long waveguide.
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- Research Article
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- Copyright © Materials Research Society 2005
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