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Reactivity and Migration of Hydrogen in A-SI:H

Published online by Cambridge University Press:  15 February 2011

R. Biswas ,
Qiming Li ,
B. C. Pan  and
Y. Yoon
R. Biswas
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
Qiming Li
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
B. C. Pan
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
Y. Yoon
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
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Abstract

Tight-binding molecular dynamics calculations reveal a new mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicon and breaking their Si-Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network and have lower energies than H at the center of stretched Si-Si bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 135
Copyright
Copyright © Materials Research Society 1997

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References

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