Hostname: page-component-7479d7b7d-k7p5g Total loading time: 0 Render date: 2024-07-12T01:44:11.603Z Has data issue: false hasContentIssue false
  • English
  • Français

Recent Progress in Industrial Applications of CAT-CVD (Hot-Wire Cvd)

Published online by Cambridge University Press:  01 February 2011

Atsushi Masuda ,
Akira Izumi ,
Hironobu Umemoto  and
Hideki Matsumura
Atsushi Masuda
Affiliation:
School of Materials Science, Japan AdvancedInstitute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Akira Izumi
Affiliation:
School of Materials Science, Japan AdvancedInstitute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Hironobu Umemoto
Affiliation:
School of Materials Science, Japan AdvancedInstitute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Hideki Matsumura
Affiliation:
School of Materials Science, Japan AdvancedInstitute of Science and Technology (JAIST), Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Get access

Abstract

Rapid progresses are achieved in catalytic CVD (Cat-CVD), often called hot-wire CVD, in the past 3-years NEDO national project in Japan. Cat-CVD technology presents many advantages in thin-film formation processes; high-efficiency of gas use, large-area deposition, no ion bombardment and low-temperature deposition even below 200°C. All of the elemental techniques for the industrially applicable Cat-CVD apparatuses, such as the suppression of the metal contamination, the precise control of the substrate temperature, the life extension of the catalyzer, 1-m size uniform deposition and the chamber cleaning, have been completely developed. Sophisticatedly designed substrate holder with electrostatic chuck and showerhead equipped with catalyzers are both key technologies for these achievements. High reproducibility for film properties is also obtained by controlling the reaction between high-density radicals and chamber walls. Prototype mass-production apparatus for SiNx passivation films in GaAs devices has been already developed and this will be probably the first application of Cat-CVD in industry. These recent movements appear to promise the drastic revolution in semiconductor and flat-panel display industries by introducing Cat-CVD in very near future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A17.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Matsumura, H. and Tachibana, H., Appl. Phys. Lett., 47, 833 (1985).Google Scholar
[2] Matsumura, H., Ihara, H. and Tachibana, H., Proc. 18th IEEE Photovoltaic Specialists Conf., Las Vegas, 1985, p. 1277.Google Scholar
[3] Yamazaki, S., Wada, K. and Taniguchi, I., Jpn. J. Appl. Phys., 9, 1467 (1970).Google Scholar
[4] Wiesmann, H., Ghosh, A. K., McMahon, T. and Strongin, M., J. Appl. Phys., 50, 3752 (1979).Google Scholar
[5] Matsumura, H., J. Appl. Phys., 65, 4396 (1989).Google Scholar
[6] Nozaki, Y., Kitazoe, M., Horii, K., Umemoto, H., Masuda, A. and Matsumura, H., Thin Solid Films, 395, 47 (2001).Google Scholar
[7] Masuda, A., Izumi, A., Umemoto, H. and Matsumura, H., Vacuum, 55 (2002) in press.Google Scholar
[8] Honda, N., Masuda, A. and Matsumura, H., J. Non-Cryst. Solids, 266-269, 100 (2000).Google Scholar
[9] Nelson, B. P., Xu, Y., Mahan, A. H., Williamson, D. L. and Crandall, R. S., Mater. Res. Soc. Symp. Proc., 609, A22.8 (2000).Google Scholar
[10] Umemoto, H., Ohara, K., Morita, D., Nozaki, Y., Masuda, A. and Matsumura, H., J. Appl. Phys., 91, 1650 (2002).Google Scholar
[11] Nozaki, Y., Kongo, K., Miyazaki, T., Kitazoe, M., Horii, K., Umemoto, H., Masuda, A. and Matsumura, H., J. Appl. Phys., 88, 5437 (2000).Google Scholar
[12] Masuda, A., Ishibashi, Y., Izumi, A. and Matsumura, H., Dig. Tech. Papers 2000 Int. Workshop Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials-, Tokyo, 2000, p. 219.Google Scholar
[13] Kamesaki, K., Masuda, A., Izumi, A. and Matsumura, H., Thin Solid Films, 395, 169 (2001).Google Scholar
[14] Matsumura, H., Thin Solid Films, 395, 1 (2001).Google Scholar
[15] Matsumura, H., Jpn. J. Appl. Phys., 30, L1522 (1991).Google Scholar
[16] Matsumura, H., Appl. Phys. Lett., 51, 804 (1987).Google Scholar
[17] Matsumura, H., J. Appl. Phys., 66, 3612 (1989).Google Scholar
[18] Itoh, T., Katoh, Y., Fujiwara, T., Fukunaga, K., Nonomura, S. and Nitta, S., Thin Solid Films, 395, 240 (2001).Google Scholar
[19] Uchiyama, Y., Abe, K., Asari, S., Saitou, K. and Hayama, M., Ext. Abst. 62nd Autumn Meeting of the Japan Society of Applied Physics, Toyota, 2001, p. 638.Google Scholar
[20] Yokomichi, H., Masuda, A. and Kishimoto, N., Thin Solid Films, 395, 249 (2001).Google Scholar
[21] Lau, K. K. S., Lewis, H. G. P., Limb, S. J., Kwan, M. C. and Gleason, K. K., Thin Solid Films, 395, 288 (2001).Google Scholar
[22] Dupuie, J. L. and Gulari, E., Appl. Phys. Lett., 59, 549 (1991).Google Scholar
[23] Yokomichi, H., Sakai, F., Ichihara, M. and Kishimoto, N., Thin Solid Films, 395, 253 (2001).Google Scholar
[24] Bauer, S., Herbst, W., Schroeder, B. and Oechsner, H., Proc. 26th IEEE Photovoltaic Specialists Conf., Anaheim, 1997, p. 719.Google Scholar
[25] Wang, Q., Iwaniczko, E., Xu, Y., Gao, W., Nelson, B. P., Mahan, A. H., Crandall, R. S. and Branz, H. M., Mater. Res. Soc. Symp. Proc., 609, A4.3 (2000).Google Scholar
[26] Niikura, C., Kim, S. Y., Drevillon, B., Poissant, Y., P. Roca i Cabarrocas and Bouree, J. E., Thin Solid Films, 395, 178 (2001).Google Scholar
[27] Klein, S., Finger, F., Carius, R., O Kluth, Neto, L. B., Wagner, H. and Stutzmann, M., Proc. 17th European Photovoltaic Solar Energy Conf. and Exhibition, Munich, 2001, in press.Google Scholar
[28] Meiling, H. and Schropp, R. E. I., Appl. Phys. Lett., 69 1062 (1996).Google Scholar
[29] Sakai, M., Tsutsumi, T., Yoshioka, T., Masuda, A. and Matsumura, H., Thin Solid Films, 395, 330 (2001).Google Scholar
[30] Masuda, A., Sakai, M., Tsutsumi, T., Yonezawa, T. and Matsumura, H., Dig. Tech. Papers 2001 Int. Workshop Active-Matrix Liquid-Crystal Displays -TFT Technologies and Related Materials-, Tokyo, 2001, p. 147.Google Scholar
[31] Kasai, H., Kusumoto, N., Yamanaka, H., Yamoto, H., Taniguchi, T., Ishida, T., Toyoda, K. and Kunii, Y., Tech. Report IEICE, 101, No. 14 and 16, 19 (2001).Google Scholar
[32] Hattori, R., Nakamura, G., Nomura, S., Ichise, T., Masuda, A. and Matsumura, H., 19th Annual IEEE Gallium Arsenide Integrated Circuit Symp., Anaheim, 1997, p. 78.Google Scholar
[33] Miyoshi, Y., Okada, S., Matsumura, H., Nomura, S., Kohno, M., Nashimoto, Y. and Mizuta, M., Ext. Abst. 44th Spring Meeting of the Japan Society of Applied Physics and Related Societies, Funabashi, 1997, p. 1280.Google Scholar
[34] Oku, T., Totsuka, M. and Hattori, R., Ext. Abst. 1st Int. Conf. Cat-CVD (Hot-Wire CVD) Process, Kanazawa, 2000, p. 249.Google Scholar
[35] Saitoh, K., Izumi, A. and Matsumura, H., Ext. Abst. 49th Spring Meeting of the Japan Society of Applied Physics and Related Societies, Hiratsuka, 2002, p. 70.Google Scholar
[36] Minamikawa, T., Yonezawa, Y., Heya, A., Fujimori, Y., Nakamura, T., Masuda, A. and Matsumura, H., Thin Solid Films, 395, 284 (2001).Google Scholar
[37] Izumi, A., Masuda, A., Okada, S. and Matsumura, H., Inst. Phys. Conf. Ser., No. 155, 343 (1997).Google Scholar
[38] Dupuie, J. L. and Gulari, E., J. Appl. Phys., 71, 4030 (1992).Google Scholar
[39] Izumi, A. and Matsumura, H., Appl. Phys. Lett., 71, 1371 (1997).Google Scholar
[40] Izumi, A., Masuda, A. and Matsumura, H., Thin Solid Films, 343-344, 528 (1999).Google Scholar
[41] Izumi, A., Sato, H. and Matsumura, H., Mater. Res. Soc. Symp. Proc., 670, K7.8 (2001).Google Scholar
[42] Izumi, A., Sohara, S., Kudo, M. and Matsumura, H., Electrochem. Solid-State Lett., 2, 388 (1999).Google Scholar
[43] Izumi, A., Sato, H., Hashioka, S., Kudo, M. and Matsumura, H., Microelectron. Eng., 51-52, 495 (2000).Google Scholar
[44] Nishimura, S., Masuda, A., Izumi, A. and Matsumura, H., Tech. Report IEICE, 102, No. 395, 61 (2002).Google Scholar
[45] Izumi, A. and Matsumura, H., Abst. IUVSTA 15th Int. Vacuum Congress, AVS 48th Int. Symp. and 11th Int. Conf. Solid Surfaces, San Francisco, 2001, p. 84.Google Scholar
[46] Masuda, A., Ishibashi, Y., Uchida, K., Kamesaki, K., Izumi, A. and Matsumura, H., Tech. Dig. 12th Int. Photovoltaic Science and Engineering Conf., Jeju, 2001, p. 241.Google Scholar
[47] Sato, H., Izumi, A. and Matsumura, H., Appl. Phys. Lett., 77, 2752 (2000).Google Scholar
[48] Matsumura, H., Kamesaki, K., Masuda, A. and Izumi, A., Jpn. J. Appl. Phys., 40, L289 (2001).Google Scholar
[49] Heya, A., Masuda, A. and Matsumura, H., Appl. Phys. Lett., 74, 2143 (1999).Google Scholar
[50] Karasawa, M., Ishibashi, K. and Nomura, S., ANELVA Tech. Reports, 6, 32 (1999).Google Scholar
[51] Ishibashi, K., Thin Solid Films, 395, 55 (2001).Google Scholar
[52] Masuda, A., Ishibashi, Y. and Matsumura, H., Mater. Res. Soc. Symp. Proc., 609, A6.3 (2000).Google Scholar
[53] Karasawa, M., Masuda, A., Ishibashi, K. and Matsumura, H., Thin Solid Films, 395, 71 (2001).Google Scholar
[54] Fuwa, K., Maehira, K., Yuyama, J., Suzuki, S., Tateno, N., Kitabayashi, T. and Yonezawa, J., Ext. Abst. 61st Autumn Meeting of the Japan Society of Applied Physics, Sapporo, 2000, p. 575.Google Scholar
[55] Karasawa, M., Sakai, M., Ishibashi, K., Tanaka, M., Masuda, A. and Matsumura, H., J. Vac. Soc. Jpn., 45 (2002) in press.Google Scholar
[56] Karasawa, M., Sakai, M., Ishibashi, K., Tanaka, M., Masuda, A. and Matsumura, H., Proc. 21st Int. Display Research Conf. in conjunction with 8th Int. Display Workshops, Nagoya, 2001, p. 1735.Google Scholar
[57] The Nikkan Kogyo Shimbun, July 12, 2001.Google Scholar
[58] The Chemical Daily, February 22, 2002.Google Scholar
[59] Uchiyama, Y., Masuda, A. and Matsumura, H., Thin Solid Films, 395, 275 (2001).Google Scholar
[60] Sato, H., Izumi, A., Masuda, A. and Matsumura, H., Thin Solid Films, 395, 280 (2001).Google Scholar
[61] Sakai, M., Ext. Abst. 49th Spring Meeting of the Japan Society of Applied Physics and Related Societies, Hiratsuka, 2002, p. 71.Google Scholar
[62] Yogoro, Y., Masuda, A. and Matsumura, H., Ext. Abst. 49th Spring Meeting of the Japan Society of Applied Physics and Related Societies, Hiratsuka, 2002, 28a–G.Google Scholar
[63] Niira, K., Senta, H., Hakuma, H., Komoda, M., Okui, H., Fukui, K., Arimune, H. and Shirasawa, K., Tech. Dig. 12th Int. Photovoltaic Science and Engineering Conf., Jeju, 2001, p. 433.Google Scholar
[64] Niira, K., Senta, H., Hakuma, H., Komoda, M., Okui, H., Fukui, K., Arimune, H. and Shirasawa, K., Thin Solid Films, 395, 315 (2001).Google Scholar